真空紫外光による高密度水素ラジカル生成と半導体製造技術ボトルネック解消

• Project/Area Number: 25K00977
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 14010:Fundamental plasma-related
• Research Institution: The University of Osaka
• Principal Investigator: 田中 のぞみ 大阪大学, レーザー科学研究所, 特任講師(常勤) (60581296)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2027: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2026: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2025: ¥13,910,000 (Direct Cost: ¥10,700,000、Indirect Cost: ¥3,210,000)