絶縁膜上における極薄半導体膜の固相成長の探求と次世代トランジスタへの展開

• Project/Area Number: 25K01268
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Kyushu University
• Principal Investigator: 佐道 泰造 九州大学, システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2025-04-01 – 2030-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2029: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000); Fiscal Year 2028: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2027: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2026: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2025: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)