high-OP/high-k絶縁膜スタック構造を用いたグラフェンFETの高移動度化

• Project/Area Number: 25K01278
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: 沖川 侑揮 国立研究開発法人産業技術総合研究所, 材料・化学領域, 主任研究員 (50635315)
• Project Period (FY): 2025-04-01 – 2029-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000); Fiscal Year 2028: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000); Fiscal Year 2027: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000); Fiscal Year 2026: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000); Fiscal Year 2025: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)