SiC表面に自己集積したグラフェンナノリボン列の顕微光電子分光による電子状態の研究

• Project/Area Number: 25K07182
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
• Research Institution: Institute of Science Tokyo
• Principal Investigator: 小森 文夫 東京科学大学, 物質理工学院, 研究員 (60170388)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2027: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2026: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2025: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)