極低温におけるフラッシュメモリの異常SILC生成ダイナミクス観測のための大規模評価

• Project/Area Number: 25K07837
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Technology, Toyota College
• Principal Investigator: 熊谷 勇喜 豊田工業高等専門学校, 電気・電子システム工学科, 准教授 (40824496)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2027: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000); Fiscal Year 2026: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000); Fiscal Year 2025: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)