Engineering high conductivity in wurtzite nitride via strategic cations co-doping

• Project/Area Number: 25K07841
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Anggraini SriAyu 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (80784123)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Granted (Fiscal Year 2025)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2027: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2026: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2025: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: thin film / nitride / wurtzite / conductivity

Outline of Research at the Start

In FY 2025-2026, we will strategically dope monovalent and divalent cations into aluminum nitride (AlN) and study the electronic conductivity and wurtzite phase stability. In FY 2027, we will analyze if addition of d10 cations is important roles in controlling conductivity and phase stability.