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Engineering high conductivity in wurtzite nitride via strategic cations co-doping

Research Project

Project/Area Number 25K07841
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Anggraini SriAyu  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (80784123)

Project Period (FY) 2025-04-01 – 2028-03-31
Project Status Granted (Fiscal Year 2025)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2027: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2026: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2025: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywordsthin film / nitride / wurtzite / conductivity
Outline of Research at the Start

In FY 2025-2026, we will strategically dope monovalent and divalent cations into aluminum nitride (AlN) and study the electronic conductivity and wurtzite phase stability. In FY 2027, we will analyze if addition of d10 cations is important roles in controlling conductivity and phase stability.

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Published: 2025-04-17   Modified: 2025-06-20  

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