トンネルFETを利用した低電圧駆動シリコンマッハツェンダ光変調器の開発

• Project/Area Number: 25K07865
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: Hiroshima University
• Principal Investigator: 田部井 哲夫 広島大学, 半導体産業技術研究所, 特任准教授 (40536124)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2027: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000); Fiscal Year 2026: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2025: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)