| Project/Area Number |
25K08434
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | Nagoya University |
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Principal Investigator |
Bernard Gelloz 名古屋大学, 理学研究科, 准教授 (40343157)
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| Co-Investigator(Kenkyū-buntansha) |
金 蓮花 山梨大学, 大学院総合研究部, 教授 (40384656)
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| Project Period (FY) |
2025-04-01 – 2028-03-31
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| Project Status |
Granted (Fiscal Year 2025)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2027: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2026: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2025: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | nanostructure / silicon / luminescence / device / plasmonic |
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| Outline of Research at the Start |
Enabling practical luminescence and optoelectronic functions in silicon using nanostructures, metal-Si nanocomposites and SiSn alloys. Targets are electroluminescence, photovoltaics, biomarkers, etc. Innovative solutions: (i) exploit native interconnection of nanocrystals in porous nanostructures, (ii) electrochemical or photochemical size-selective nanostructure tailoring methods, (iii) new carrier injection mechanisms in devices, (iv) 3D plasmonic nano-structures. Some of these solutions will also allow for the development of direct bandgap SiSn alloys for integrable Si-based light emission.
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