放射線誘起電流によるSiC半導体の偶発破壊素過程の実験的解明

• Project/Area Number: 25K08488
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 29030:Applied condensed matter physics-related
• Research Institution: National Institutes for Quantum Science and Technology
• Principal Investigator: 牧野 高紘 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所 量子機能創製研究センター, 主幹研究員 (80549668)
• Project Period (FY): 2025-04-01 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2027: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2026: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2025: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)