トポロジカル半金属薄膜における不均一性設計とカイラル電磁場応答の開拓

• Project/Area Number: 25K17947
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Institute of Science Tokyo
• Principal Investigator: 西早 辰一 東京科学大学, 理学院, 助教 (80966078)
• Project Period (FY): 2025-04-01 – 2027-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2026: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2025: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)