3次元積層半導体デバイス製造に向けた水素を用いた金属低温接合技術の開発

• Project/Area Number: 25K22060
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 18:Mechanics of materials, production engineering, design engineering, and related fields
• Research Institution: The University of Osaka
• Principal Investigator: 大参 宏昌 大阪大学, 大学院工学研究科, 准教授 (00335382)
• Project Period (FY): 2025-06-27 – 2028-03-31
• Project Status: Adopted (Fiscal Year 2025)
• Budget Amount: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2027: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2026: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2025: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)