Budget Amount *help |
¥180,180,000 (Direct Cost: ¥138,600,000、Indirect Cost: ¥41,580,000)
Fiscal Year 2018: ¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2017: ¥22,750,000 (Direct Cost: ¥17,500,000、Indirect Cost: ¥5,250,000)
Fiscal Year 2016: ¥33,670,000 (Direct Cost: ¥25,900,000、Indirect Cost: ¥7,770,000)
Fiscal Year 2015: ¥48,230,000 (Direct Cost: ¥37,100,000、Indirect Cost: ¥11,130,000)
Fiscal Year 2014: ¥56,420,000 (Direct Cost: ¥43,400,000、Indirect Cost: ¥13,020,000)
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Outline of Final Research Achievements |
We have investigated the thin-film growth and process technologies of Sn-related group-IV semiconductor such as germanium-tin and germanium-silicon-tin alloys for applications of tunnel field-effect transistor and multifunctional photoelectric device those will contribute to next generation electronics. We developed engineering technologies of thin films, interface properties, energy band structure, and electronic device process, and also established fundamental engineering and science of Sn-related group-IV alloy semiconductors contributing to the progress of low-power consumption transistors and multifunctional electronic and optoelectronic devices.
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