| Budget Amount *help |
¥40,820,000 (Direct Cost: ¥31,400,000、Indirect Cost: ¥9,420,000)
Fiscal Year 2017: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2016: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2015: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2014: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
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| Outline of Final Research Achievements |
In order to form a free-standing-like epitaxial silicene, and to form a capping layer which keeps the properties of silicene but prevents oxidation of silicene, the interfaces formed between silicene and substrates, silicene and capping layers were studied using high-resolution photoelectron spectroscopy at synchrotron radiation facility. By depositing silicon on zirconium diboride thin film terminated by monolayer hexagonal boron nitride (h-BN), silicene was formed in between h-BN and diboride. Photoelectron spectroscopy revealed that this silicene sheet formed through intercalation has similar electronic properties to the spontaneously formed ones, and monolayer h-BN successfully prevents oxidation of silicene for at least an hour in air.
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