Mechanical transfer of GaN-based devices using layered BN

• Project/Area Number: 26246015
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Hirosaki University
• Principal Investigator: Kobayashi Yasuyuki 弘前大学, 理工学研究科, 教授 (90393727)
• Co-Investigator(Kenkyū-buntansha): 岡本 浩 弘前大学, 理工学研究科, 教授 (00513342) ; 中澤 日出樹 弘前大学, 理工学研究科, 准教授 (90344613)
• Research Collaborator: KUMAKURA KAZUHIDE ; HIROKI MASANOBU
• Project Period (FY): 2014-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥38,350,000 (Direct Cost: ¥29,500,000、Indirect Cost: ¥8,850,000); Fiscal Year 2017: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2016: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2015: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000); Fiscal Year 2014: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
• Keywords: 半導体 / 結晶成長 / 半導体物性 / BN / MBE / GaN / 六方晶BN / GaN系薄膜 / 機械的転写 / 分子線エピタキシー / 六方晶窒化ホウ素 / 分子線エピタキシー装置

Outline of Final Research Achievements

We grew single-crystal GaN films on 100-nm-thick AlN buffer layers that were grown on 3-nm-thick hexagonal boron nitride (h-BN) buffer layers on (0001) sapphire substrates with plasma-assisted molecular beam epitaxy (MBE). X-ray diffraction for the GaN film revealed that the AlN layer on the h-BN layer enabled the crystalline quality of GaN film on it to be greatly improved. Streaky reflection high energy electron diffraction pattern for the GaN film indicated that the single crystal (0001) GaN thin film with a flat surface was grown on the AlN/h-BN buffer layer.　MBE has a promising as the growth technology for high-quality GaN thin films grown on the h-BN buffer layers.

Academic Significance and Societal Importance of the Research Achievements

六方晶窒化ホウ素(h-BN)バッファ層上にGaN系デバイス構造を成長し、h-BNを剥離層としてそのGaN系デバイス構造を機械的に転写することが可能であるが、h-BNとGaNヘテロ成長のミクロスコピックな成長機構はほとんど解明されていない。本研究は、分子線エピタキシー法により、平坦で原子レベルで膜厚制御されたh-BNバッファ層を実現し、そのh-BN上にAlNバッファ層を導入することにより、単結晶(0001)GaN薄膜が成長することを見出した。これらの知見は、そのヘテロ成長機構を解明することに貢献し、高品質な機械的転写可能なGaN系デバイス構造の実現につながり極めて重要である。

Research Products

• [Presentation] Plasma-assisted Molecular Beam Epitaxy Growth of GaN Thin Films on Sapphire Substrates Using h-BN/AlN Buffer Layers (2019)
  • Author(s): Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
  • Organizer: 11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  • Int'l Joint Research
• [Presentation] MBEによるh-BNバッファ層を用いた(0001)サファイア基板上GaN成長 (2018)
  • Author(s): 小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy (2018)
  • Author(s): Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
  • Organizer: 2018 International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] h-BN/AlNバッファ層を用いたサファイア基板上GaN薄膜のMBE成長 (2018)
  • Author(s): 小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] Growth of GaN-based Semiconductors on h-BN Release Layers (2018)
  • Author(s): Y. Kobayashi, K. Nakata, M. Hiroki, K. Kumakura
  • Organizer: 4th Intensive Discussion on Nitride Semiconductor
  • Int'l Joint Research / Invited
• [Presentation] MBEによる(0001)サファイア基板上BN薄膜成長 (2017)
  • Author(s): 小林康之、木村拓磨、中澤日出樹、岡本浩、廣木正伸、熊倉一英
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy (2017)
  • Author(s): Y. Kobayashi, T. Kimura, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
  • Organizer: 2017 International Conference on Solid State Devices and Materials
  • Int'l Joint Research