| Budget Amount *help |
¥41,860,000 (Direct Cost: ¥32,200,000、Indirect Cost: ¥9,660,000)
Fiscal Year 2017: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2015: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
Fiscal Year 2014: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
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| Outline of Final Research Achievements |
The intermediate band solar cell is one of the most promising candidates for the next generation of photovoltaic cells with a maximum theoretical efficiency of >60% under sunlight concentration, and quantum dot based solar cells gained intense research.
In this work, type-II GaSb/AlGaAs quantum dot solar cells were investigated for application to intermediate band solar cells. Multi-stacked GaSb quantum dots were embedded in the i-region of host GaAs or AlGaAs single-junction solar cells. Fourier transform photocurrent spectroscopy with absolute intensity calibration revealed infrared external quantum efficiency spectra by two-step photon absorption. Thermionic emission of photo-carriers was suppressed efficiently in these device architectures, and significant photocurrent production via two-step photon absorption was confirmed at room temperature operation.
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