| Budget Amount *help |
¥42,250,000 (Direct Cost: ¥32,500,000、Indirect Cost: ¥9,750,000)
Fiscal Year 2016: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Fiscal Year 2015: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2014: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
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| Outline of Final Research Achievements |
This is the first study to report InGaN growth by tri-halide vapor phase epitaxy (THVPE) using InCl3 and GaCl3. The influence of the surface orientation of the initial substrate on InGaN THVPE growth was investigated using freestanding GaN (0001) and (000-1). Only a N-polar InGaN epitaxial layer was obtained because of the instability of GaCl3 adsorption on the the Ga-polar surface. We employed the first principle calculation for the adsorption process of GaCl3 on the surface. In addition, we investigated the influence of the group III input pressure on the growth rate and solid composition grown on a (000-1) GaN substrate. The growth rate increased linearly with group III concentration and a maximum growth rate of 15.6 micro/h was achieved at a input partial pressure of the group III precursors, GaCl3 and InCl3.
As a result of this research, by using THVPE, we succeeded in growing thick InGaN layer of 10 microns or more, which was impossible to grow by previous growth method.
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