Thick and high quarity InGaN growth by THVPE
| Project/Area Number |
26246018
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOUKITU Akinori 東京農工大学, 工学(系)研究科(研究院), 理事 (10111626)
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| Co-Investigator(Kenkyū-buntansha) |
村上 尚 東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥42,250,000 (Direct Cost: ¥32,500,000、Indirect Cost: ¥9,750,000)
Fiscal Year 2016: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Fiscal Year 2015: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2014: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
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| Keywords | 窒化物結晶 / THVPE / エピタキシャル成長 / 気相成長 / 三元混晶 / 発光材料 / 受光材料 / HVPE / InGaN三元混晶 / 窒化物半導体 / 発光素子 / 太陽電池 / InGaN / 発光素子材料 / 大陽電池材料 |
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| Outline of Final Research Achievements |
This is the first study to report InGaN growth by tri-halide vapor phase epitaxy (THVPE) using InCl3 and GaCl3. The influence of the surface orientation of the initial substrate on InGaN THVPE growth was investigated using freestanding GaN (0001) and (000-1). Only a N-polar InGaN epitaxial layer was obtained because of the instability of GaCl3 adsorption on the the Ga-polar surface. We employed the first principle calculation for the adsorption process of GaCl3 on the surface. In addition, we investigated the influence of the group III input pressure on the growth rate and solid composition grown on a (000-1) GaN substrate. The growth rate increased linearly with group III concentration and a maximum growth rate of 15.6 micro/h was achieved at a input partial pressure of the group III precursors, GaCl3 and InCl3.
As a result of this research, by using THVPE, we succeeded in growing thick InGaN layer of 10 microns or more, which was impossible to grow by previous growth method.
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Report
(4 results)
Research Products
(27 results)
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[Journal Article] Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy2016
Author(s)
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi
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Journal Title
Applied Physics Letters
Volume: 108
Issue: 13
Pages: 133503-133506
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Presentation] Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers2015
Author(s)
Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
Organizer
9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
Place of Presentation
Hansol Oak Valley, Wonju, Korea
Year and Date
2015-11-04
Related Report
Int'l Joint Research / Invited
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