In-situ observation of threading dislocation conversion in high-quality SiC growth
| Project/Area Number |
26246019
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Crystal engineering
|
|---|
| Research Institution | Nagoya University |
|---|
Principal Investigator |
Ujihara Toru 名古屋大学, 未来材料・システム研究所, 教授 (60312641)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
原田 俊太 名古屋大学, 未来材料・システム研究所, 助教 (30612460)
田渕 雅夫 名古屋大学, シンクロトロン光研究センター, 教授 (90222124)
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000)
Fiscal Year 2016: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2015: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2014: ¥29,900,000 (Direct Cost: ¥23,000,000、Indirect Cost: ¥6,900,000)
|
|---|
| Keywords | 結晶成長 / 結晶欠陥 |
|---|
| Outline of Final Research Achievements |
Silicon carbide technology which can overcome the performance of silicon power devices is being developed in the world. However, many types of defect (threading dislocations, stacking faults, basal-plane dislocations) still remain in commercial SiC wafers. Thus, the reduction of them is a key to increase its reliability and performance. In this study, we developed new system for in-situ observation of growth surface and in-situ X-ray topography and evaluated the behaviors of defetcs in SiC at high temperatures.
|
Report
(4 results)
Research Products
(5 results)
