Budget Amount *help |
¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000)
Fiscal Year 2016: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2015: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2014: ¥29,900,000 (Direct Cost: ¥23,000,000、Indirect Cost: ¥6,900,000)
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Outline of Final Research Achievements |
Silicon carbide technology which can overcome the performance of silicon power devices is being developed in the world. However, many types of defect (threading dislocations, stacking faults, basal-plane dislocations) still remain in commercial SiC wafers. Thus, the reduction of them is a key to increase its reliability and performance. In this study, we developed new system for in-situ observation of growth surface and in-situ X-ray topography and evaluated the behaviors of defetcs in SiC at high temperatures.
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