In-situ observation of threading dislocation conversion in high-quality SiC growth

• Project/Area Number: 26246019
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Nagoya University
• Principal Investigator: Ujihara Toru 名古屋大学, 未来材料・システム研究所, 教授 (60312641)
• Co-Investigator(Kenkyū-buntansha): 原田 俊太 名古屋大学, 未来材料・システム研究所, 助教 (30612460) ; 田渕 雅夫 名古屋大学, シンクロトロン光研究センター, 教授 (90222124)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000); Fiscal Year 2016: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000); Fiscal Year 2015: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000); Fiscal Year 2014: ¥29,900,000 (Direct Cost: ¥23,000,000、Indirect Cost: ¥6,900,000)
• Keywords: 結晶成長 / 結晶欠陥

Outline of Final Research Achievements

Silicon carbide technology which can overcome the performance of silicon power devices is being developed in the world. However, many types of defect (threading dislocations, stacking faults, basal-plane dislocations) still remain in commercial SiC wafers. Thus, the reduction of them is a key to increase its reliability and performance. In this study, we developed new system for in-situ observation of growth surface and in-situ X-ray topography and evaluated the behaviors of defetcs in SiC at high temperatures.

Research Products

• [Journal Article] Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth (2016)
  • Author(s): S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
  • Journal Title: Cryst. Growth Des Volume: 16 Issue: 11 Pages: 6436-6439
  • DOI: 10.1021/acs.cgd.6b01107
  • Peer Reviewed
• [Journal Article] Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis (2016)
  • Author(s): S. Xiao, S. Harada, K. Murayama, T. Ujihara
  • Journal Title: Cryst. Growth Des Volume: 16 Issue: 9 Pages: 5136-5140
  • DOI: 10.1021/acs.cgd.6b00711
  • Peer Reviewed
• [Presentation] High Quality SiC Single Crystal Grown by Soltion Growth Method (2016)
  • Author(s): T. Ujihara
  • Organizer: Fall Meeting of the Korean Ceramics Society
  • Place of Presentation: Seoul
  • Year and Date: 2016-11-23
  • Int'l Joint Research / Invited
• [Presentation] Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy (2016)
  • Author(s): T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa
  • Organizer: the 18th International Conference on Crystal Growth and Epitaxy
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2016-08-07
  • Int'l Joint Research / Invited
• [Presentation] The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth (2016)
  • Author(s): S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara
  • Organizer: the 18th International Conference on Crystal Growth and Epitaxy
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2016-08-07
  • Int'l Joint Research