| Budget Amount *help |
¥33,020,000 (Direct Cost: ¥25,400,000、Indirect Cost: ¥7,620,000)
Fiscal Year 2018: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2017: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2016: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2015: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2014: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
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| Outline of Final Research Achievements |
We have aimed at reducing the generation of short-lifetime radicals and nanoparticles in atmospheric-pressure (AP) very high-frequency (VHF) plasma by controlling the ON time of pulse-modulated input power, and investigated a highly efficient deposition process of good-quality silicon (Si) and silicon oxide (SiOx) films at low temperatures. The results have demonstrated that the pulse modulation of input power is very effective on generating precursor radicals useful for the creation of high-quality films. As a consequence, we have achieved the deposition of amorphous Si layers with good electrical property at a substrate temperature as low as 120 C. It has also been shown that SiOx layers with reasonably good dielectric property can be formed at a temperature of 120 C. By combining the depositions of both Si and SiOx layers using AP-VHF plasma, highly efficient formation processes of various functional thin film devices on flexible polymer substrates will be strongly expected.
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