Development of ferromagnetic tunnel junctions with a ferroelectric barrier layer and the control of their spin-transport by electric field effects
Project/Area Number |
26249037
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Tohoku University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
末益 崇 筑波大学, 数理物質科学研究科(系), 教授 (40282339)
白井 正文 東北大学, 電気通信研究所, 教授 (70221306)
古門 聡士 静岡大学, 工学研究科, 准教授 (50377719)
磯上 慎二 福島工業高等専門学校, 一般教科(物理科), 准教授 (10586853)
|
Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥31,850,000 (Direct Cost: ¥24,500,000、Indirect Cost: ¥7,350,000)
Fiscal Year 2016: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
Fiscal Year 2015: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2014: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000)
|
Keywords | スピントロニクス / 磁性材料 / 磁気抵抗効果 / スピン分極 / 電界効果 / スピンエレクトロニクス / 磁性 / 先端磁性デバイス / 物性実験 / 物性理論 / 先端機能デバイス |
Outline of Final Research Achievements |
This study is aimed to control the spin-transport in Fe4N-based ferromagnetic tunnel junctions through the electric field effect by spontaneous polarization of a ferroelectric tunnel barrier. Various kinds of anti-perovskite-type transition-metal nitride thin films were successfully synthesized and their magnetic and magneto-transport properties were examined. The spin-polarized transport theory was newly constructed taking into account the spin-orbit interaction and crystal field effects, and successfully evaluated the spin-polarization of conduction electrons in ferromagnets with its sign through the anisotropic magnetoresistance effects. Epitaxial growth technique of thin films was developed for complex oxides as perovskite-type ferroelectrics. Electric field effects of ferromagnetic tunnel junctions with a ferroelectric barrier layer were investigated by the first-principles calculation.
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Report
(4 results)
Research Products
(88 results)
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[Journal Article] Magnetoresistance behaviors of conducting filaments in resistive-switching NiO with different resistance states2017
Author(s)
Diyang Zhao, Shuang Qiao, Yuxiang Luo, Aitian Chen, Pengfei Zhang, Ping Zheng, Zhong Sun, Minghua Guo, Fu-kuo Chiang, Jian Wu, Jian-Lin Luo, Jianqi Li, Satoshi Kokado, Yayu Wang, and Yonggang Zhao
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Journal Title
ACS Applied Materials & Interfaces
Volume: 9
Issue: 12
Pages: 10835-10846
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Presentation] エピタキシャルNixFe4-xN(x = 0, 1, 3, 4)薄膜の磁気物性の評価2016
Author(s)
伊藤 啓太, 鹿原 和樹, 高田 郁弥, 東小薗 創真, 具志 俊希, 都甲 薫, 角田 匡清, 末益 崇
Organizer
第40回日本磁気学会学術講演会
Place of Presentation
金沢大学(石川県・金沢市)
Year and Date
2016-09-05
Related Report
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[Presentation] Fe4Nエピタキシャル薄膜の窒素原子占有度の評価2015
Author(s)
伊藤 啓太, 具志 俊希, 東小薗 創真, 竹田 幸治, 斎藤 祐児, 都甲 薫, 柳原 英人, 角田 匡清, 小口 多美夫, 木村 昭夫, 喜多 英治, 末益 崇
Organizer
第39回日本磁気学会学術講演会
Place of Presentation
名古屋大学(愛知県・名古屋市)
Year and Date
2015-09-08
Related Report
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[Presentation] Observation and control of magnetic domain structure in Fe4N ferromagnetic nanowire2015
Author(s)
T. Gushi, K. Ito, S. Honda, Y. Yasutomi, S. Higashikozono, K. Toko, H. Oosato, Y. Sugimoto, K. Asakawa, N. Ota, and T. Suemasu
Organizer
ASCO-NANOMAT (Asian School-Conference on Physics and Technology of Nanostructured Materials) 2015
Place of Presentation
Vladivostok (Russia)
Year and Date
2015-08-19
Related Report
Int'l Joint Research
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[Presentation] Control of domain wall position in L-shaped Fe4N negatively spin polarized ferromagnetic nanowire2015
Author(s)
Toshiki Gushi, Keita Ito, Syuta Honda, Yoko Yasutomi, Soma Higashikozono, Kaoru Toko, Hirotaka Oosato, Yoshimasa Sugimoto, Kiyoshi Asakawa, Norio Ota, and Takashi Suemasu
Organizer
IEEE International Magnetics Conference 2015
Place of Presentation
Beijing (China)
Year and Date
2015-05-11
Related Report
Int'l Joint Research
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