| Project/Area Number |
26249048
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Oda Shunri 東京工業大学, 科学技術創成研究院, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
小寺 哲夫 東京工業大学, 理工学研究科, 准教授 (00466856)
河野 行雄 東京工業大学, 量子ナノエレクトロニクス研究センター, 准教授 (90334250)
川那子 高暢 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (30726633)
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| Research Collaborator |
MILNE W. I. ケンブリッジ大学, 工学部, 教授
Williams D 日立ケンブリッジ研究所, 所長
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| Project Period (FY) |
2014-06-27 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥41,860,000 (Direct Cost: ¥32,200,000、Indirect Cost: ¥9,660,000)
Fiscal Year 2016: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2015: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
Fiscal Year 2014: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
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| Keywords | シリコン量子ドット / ナノ結晶シリコン / コアシェルナノワイヤ / 熱電素子 / 量子ビット / スピンブロッケード / 3重量子ドット / 界面欠陥のコヒーレント制御 / Ge/Siコアシェルナノワイヤ / ナノシリコン量子ドット / シリコンナノワイヤ / 量子情報素子 / 正孔スピン / ナノワイヤ / 結合量子ドット / スピン量子ビット |
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| Outline of Final Research Achievements |
Size-control and position-control of silicon nanocrystals have been studied. A single nanocrystals have been located between 9 nm gap electrode and unique characteristics of Coulomb blockade were observed. Fabrication of Ge/Si core/shell nanowires have been optimized. Electrical measurements have revealed that this system is promising for high performance thermoelectric generation due to quantum effects. Coupled quantum dots integrated with a charge-sensor single-electron-transistor have been fabricated by electron beam lithography. A few electron regime and Paul spin blockade have been observed in double quantum dots and triple quantum dots structures as well as in p-type devices. This result is promising for future large scale integrated quantum bits application.
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