Fabrication of NeoSilicon quantum information processing devices based on position control of silicon nano-dots and nanowires
| Project/Area Number |
26249048
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Oda Shunri 東京工業大学, 科学技術創成研究院, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
小寺 哲夫 東京工業大学, 理工学研究科, 准教授 (00466856)
河野 行雄 東京工業大学, 量子ナノエレクトロニクス研究センター, 准教授 (90334250)
川那子 高暢 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (30726633)
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| Research Collaborator |
MILNE W. I. ケンブリッジ大学, 工学部, 教授
Williams D 日立ケンブリッジ研究所, 所長
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| Project Period (FY) |
2014-06-27 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥41,860,000 (Direct Cost: ¥32,200,000、Indirect Cost: ¥9,660,000)
Fiscal Year 2016: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2015: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
Fiscal Year 2014: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
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| Keywords | シリコン量子ドット / ナノ結晶シリコン / コアシェルナノワイヤ / 熱電素子 / 量子ビット / スピンブロッケード / 3重量子ドット / 界面欠陥のコヒーレント制御 / Ge/Siコアシェルナノワイヤ / ナノシリコン量子ドット / シリコンナノワイヤ / 量子情報素子 / 正孔スピン / ナノワイヤ / 結合量子ドット / スピン量子ビット |
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| Outline of Final Research Achievements |
Size-control and position-control of silicon nanocrystals have been studied. A single nanocrystals have been located between 9 nm gap electrode and unique characteristics of Coulomb blockade were observed. Fabrication of Ge/Si core/shell nanowires have been optimized. Electrical measurements have revealed that this system is promising for high performance thermoelectric generation due to quantum effects. Coupled quantum dots integrated with a charge-sensor single-electron-transistor have been fabricated by electron beam lithography. A few electron regime and Paul spin blockade have been observed in double quantum dots and triple quantum dots structures as well as in p-type devices. This result is promising for future large scale integrated quantum bits application.
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Report
(4 results)
Research Products
(58 results)
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[Presentation] Coupled quantum dot devices2015
Author(s)
T. Honda, K. Horibe, R. Mizokuchi, Lu Yi, K. Iwasaki, S. Hiraoka, T.
Organizer
11th International Conference on Nanotechnology
Place of Presentation
福岡
Year and Date
2015-05-11
Related Report
Int'l Joint Research
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