| Project/Area Number |
26249149
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nuclear engineering
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| Research Institution | Gunma University (2015-2016)
Japan Atomic Energy Agency (2014) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
鹿田 真一 国立研究開発法人産業技術総合研究所, ユビキタスエネルギー研究部門, 総括研究主幹 (00415689)
加田 渉 群馬大学, 理工学研究院, 助教 (60589117)
大島 武 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 上席研究員(定常) (50354949)
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| Co-Investigator(Renkei-kenkyūsha) |
SATOH Takahiro (ONODA Shinobu) 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 放射線高度利用施設部, 上席研究員 (10370404)
MOKUNO Yoshiaki 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, チーム長 (60358166)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥41,600,000 (Direct Cost: ¥32,000,000、Indirect Cost: ¥9,600,000)
Fiscal Year 2016: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2015: ¥14,300,000 (Direct Cost: ¥11,000,000、Indirect Cost: ¥3,300,000)
Fiscal Year 2014: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
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| Keywords | ダイヤモンド検出器 / ダイヤモンド薄膜 / 大気取出し窓兼イオン位置検出器 / 高エネルギーイオン / IBIC / ワイドバンドギャップ / 位置敏感型 / 位置敏感型検出器 / マイクロビーム |
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| Outline of Final Research Achievements |
As an exit window as well as a transmission position sensitive detector for high energy ions transmitted to atmosphere, a novel membrane device made of single crystal diamond has been developed. A test device was made and the ion-beam-induced charge (IBIC) or the time measured response (QTS) made a comprehensive evaluation. Watching the first IBIC measurement of ion incident position-dependent output signal. In addition and comparison between experimental and calculated deterioration characteristics associated with the increase in signal strength dose, proposed a new degradation parameter. The electrical activity of single crystal diamond semiconductor investigated by QTS. In addition confirmed new phenomenon due to the avalanche effect induced by ion beam generation charge amplifier.
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