Study of substrates for h-BN single crystal growth by chemical vapor deposition method
| Project/Area Number |
26286025
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
WATANABE Kenji 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20343840)
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| Co-Investigator(Renkei-kenkyūsha) |
TANIGUCHI Takashi 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点・超高圧グループ, グループリーダー (80354413)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
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| Keywords | 六方晶窒化ホウ素 / 原子層科学 / 結晶成長 / 気相成長 / 格子欠陥 / 電子デバイス / 結晶工学 / 半導体超微細化 |
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| Outline of Final Research Achievements |
In this study, we have examined the various kind of substrates for the single crystal growth of hexagonal boron nitride (h-BN) by employing the chemical vapor deposition (CVD) method.Among various kind of substrates, h-BN substrates successfully gave high quality h-BN thin films, which showed similar or higher crystallinity than the one for the crystals grown by high temperature-high pressure (HT-HP) technique. These homoepitaxial films were examined by confocal Raman depth mapping and UV-photoluminescence microscope. The depth profiles of the width of the Raman mode showed the significant decrease and the exciton luminescence near the band edge showed a single narrower band. These results imply the decrease of defects of the epitaxial h-BN layers.
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Report
(4 results)
Research Products
(14 results)
