| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
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| Outline of Final Research Achievements |
In this study, we have examined the various kind of substrates for the single crystal growth of hexagonal boron nitride (h-BN) by employing the chemical vapor deposition (CVD) method.Among various kind of substrates, h-BN substrates successfully gave high quality h-BN thin films, which showed similar or higher crystallinity than the one for the crystals grown by high temperature-high pressure (HT-HP) technique. These homoepitaxial films were examined by confocal Raman depth mapping and UV-photoluminescence microscope. The depth profiles of the width of the Raman mode showed the significant decrease and the exciton luminescence near the band edge showed a single narrower band. These results imply the decrease of defects of the epitaxial h-BN layers.
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