| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2015: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2014: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
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| Outline of Final Research Achievements |
The relationship between gap length and spin signal in Si/MgO/ferromagent devices was investigated. It was found that the amount of re-deposition metal in microfabrication process reduced by the optimaization of milling process. For the devices with Co2FeSi Heusler material electrode, spin injection efficiency of about 40% by four termianl Hanle method, and magnetoresistance ratio of about 1% by two terminal method were obtained at room temperature.
The tunnnel magnetoresistance was investigated for magnetic tunnel junctions on Si with MgO tunnel barrier and antiferromagnetic coupling layer using CoFeB and W. The resistivity of about 10 μm2 and magnetoresistance ratio of about 250% were obtained.
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