Broad peak in resistivity-temperature curve of manganese nitrides: Elucidation of peculiar conduction mechanism and development to standard-resister materials
Project/Area Number |
26286038
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Applied materials
|
Research Institution | Nagoya University |
Principal Investigator |
TAKENAKA Koshi 名古屋大学, 工学(系)研究科(研究院), 教授 (60283454)
|
Co-Investigator(Kenkyū-buntansha) |
生田 博志 名古屋大学, 工学(系)研究科(研究院), 教授 (30231129)
金子 晋久 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 研究グループ長 (30371032)
|
Co-Investigator(Renkei-kenkyūsha) |
KANEKO Nobuhisa 産業技術総合研究所, 計量標準総合センター, 研究グループ長 (30371032)
|
Project Period (FY) |
2014-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
|
Keywords | 新機能材料 / 抵抗標準 / 薄膜 / 逆ペロフスカイト |
Outline of Final Research Achievements |
We achieved the extremely low second-order temperature coefficient of resistance, -0.20 ppm/K2, with the peak temperature of 307 K by co-doping of Cu, Mn and In to Mn3AgN, which is comparable to widely-used standard-resister material, manganin. The drift rate of resistance was suppressed to less than several ppm/year by optimizing the methods of contact formation. We also successfully fabricated an epitaxial film of prototypical material Mn3CuN using a high-magnetic-field sputter method.
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Report
(4 results)
Research Products
(11 results)