| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2015: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
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| Outline of Final Research Achievements |
We achieved the extremely low second-order temperature coefficient of resistance, -0.20 ppm/K2, with the peak temperature of 307 K by co-doping of Cu, Mn and In to Mn3AgN, which is comparable to widely-used standard-resister material, manganin. The drift rate of resistance was suppressed to less than several ppm/year by optimizing the methods of contact formation. We also successfully fabricated an epitaxial film of prototypical material Mn3CuN using a high-magnetic-field sputter method.
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