Developments of high mobility uniaxially strained Germanium channel devices
| Project/Area Number |
26286044
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Tokyo City University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
ARIMOTO Keisuke 山梨大学, 医学工学総合研究部, 准教授 (30345699)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2014: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Keywords | ゲルマニウム / 結晶歪み / イオン注入 / 一軸性歪み / 結晶欠陥 / 結晶工学 / 歪み制御 / 歪みゲルマニウム / 一軸歪み / 半導体物性 |
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| Outline of Final Research Achievements |
Toward next-generation low-power-consumption and high performance semiconductor electronic devices, we focused on germanium (Ge) as a superior material alternative to silicon and developed a technique to induce crystal strain into Ge. Particularly anisotropic strain states are expected to bring the highest mobility in Ge, we developed selective ion-implantation method and succeeded in arbitral controlling of strain states by local introduction of crystal defects. As a result, we created uniaxially strained Ge by this method. Moreover, we fabricated strained Ge on insulator (GOI) substrates, which is very promising for next-generation high-mobility Ge devices.
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Report
(4 results)
Research Products
(37 results)
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[Journal Article] TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing2017
Author(s)
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
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Journal Title
Journal of Materials Science and Chemical Engineering
Volume: 5
Issue: 01
Pages: 15-25
DOI
Related Report
Peer Reviewed
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