| Budget Amount *help |
¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2014: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Outline of Final Research Achievements |
Toward next-generation low-power-consumption and high performance semiconductor electronic devices, we focused on germanium (Ge) as a superior material alternative to silicon and developed a technique to induce crystal strain into Ge. Particularly anisotropic strain states are expected to bring the highest mobility in Ge, we developed selective ion-implantation method and succeeded in arbitral controlling of strain states by local introduction of crystal defects. As a result, we created uniaxially strained Ge by this method. Moreover, we fabricated strained Ge on insulator (GOI) substrates, which is very promising for next-generation high-mobility Ge devices.
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