Development of Carbon Nitride Study using Nanoamourphous Carbon Nitride
Project/Area Number |
26286046
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | Okayama University of Science |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
森 嘉久 岡山理科大学, 理学部, 教授 (00258211)
松石 清人 筑波大学, 数理物質科学研究科(系), 教授 (10202318)
中山 敦子 新潟大学, 学内共同利用施設等, 准教授 (50399383)
福井 一俊 福井大学, 工学(系)研究科(研究院), 教授 (80156752)
高橋 博樹 日本大学, 文理学部, 教授 (80188044)
山崎 大輔 岡山大学, 地球物質科学研究センター, 准教授 (90346693)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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Keywords | ナノアモルファス / 窒化炭素 / 超硬質物質 / 新超硬質物質合成 / レニウム / 大気圧窒素プラズマ / 炭化レニウム / 体積弾性率 / アモルファス / ナノ / 転換 / 高圧 / 高温高圧 |
Outline of Final Research Achievements |
The lowest temperature of synthesis of sp3 orthorhombic carbon nitride C2N2CH2 with the bulk modulus of 258 GPa of 58 % of diamond was estimated to be 2000 K at 40 GPa using sp2 nanoamorphous carbon nitride C3N4Hx synthesized with atmospheric nitrogen plasma as a precursor. Nanoamorphous carbon nitride is chemically reactive. The chemical reaction among nanoamorphous carbon nitride and rhenium metal with the bulk modulus of 352 GPa of 80 % of diamond at high pressure and high temperature resulted in the first synthesis of Re3C with the bulk modulus of 388 GPa of 86 % of diamond. The synthesis of Re3N was already known. The synthesis of Re3C was speculated that nitrogen of Re3N was replaced with C in releasing pressure. The increase of bulk modulus of 38 GPa is attributed to the introduction of an extra C-Re bond in Re3C.
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Report
(4 results)
Research Products
(30 results)
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[Presentation] HIGH PRESSURE SYNTHESIS OF A FEW NITRIDES2014
Author(s)
K.Takarabe
Organizer
The Sixteenth International Conference on High Pressure in Semiconductor Physics (HPSP-16)
Place of Presentation
Krystal Grand Reforma Uno Hotel , Mexico City, Mexico
Year and Date
2014-08-06 – 2014-08-08
Related Report