| Project/Area Number |
26286048
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
齋藤 晋 東京工業大学, 大学院理工学研究科, 教授 (00262254)
中辻 寛 東京工業大学, 大学院総合理工学研究科, 准教授 (80311629)
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
|
|---|
| Keywords | シリセン / ゲルマネン / グラフェン / ヘキサゴナル窒化ホウ素 / 銀 / 走査トンネル顕微鏡 / ヘキサゴナルボロンナイトライド / 表面・界面物性 / ナノ材料 / 物性実験 / 結晶成長 |
|---|
| Outline of Final Research Achievements |
The graphene cousin of group IV materials; silicene and germane, are possible to be synthesize only by the epitaxial growth on substrate surfaces. However, on the conventional Ag(111) substrate surfaces, we found that the Si atoms are frequently exchanged with the substrate Ag atoms. It results in the complex growth mechanism which hinders the growth of the bilayer silicene. The strong electronic interaction also destroys the intrinsic Dirac electron nature of silicene on the Ag(111) substrate. In these respect, an alternative substrate with a weak interaction is of highly desired. We investigated the possibility of graphene as the substrate for the silicene growth. But, silicene was found not to grow on graphene. We further explored the direct growth of hBN on Si substrates for the versatile application of silicene and germane for their possible applications as the Si compatible electronic materials.
|
