Study on ferroelectric resistive switching in ferroelectric tunnel junctions and ferroelectric diodes

• Project/Area Number: 26286055
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Sawa Akihito 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 副研究部門長 (10357171)
• Co-Investigator(Renkei-kenkyūsha): YAMADA Hiroyuki 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000); Fiscal Year 2016: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2014: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
• Keywords: 表面・界面物性 / 電子・電気材料 / 酸化物エレクトロニクス / 強相関エレクトロニクス

Outline of Final Research Achievements

From the I-V characteristics and cell-area dependence of the resistive switching properties in Co/BaTiO3/(La,Sr)MnO3 (Co/BTO/LSMO) ferroelectric tunnel junctions (FTJs), we found that the thermionic emission is the dominant transport process in the FTJs and the resistive switching occurs over the entire interface. We also found that the surface termination of the ferroelectric barrier BTO in contact with a metal electrode critically affects the resistive switching properties. These results are explained in terms of the termination dependence of the depolarization field, i.e., the asymmetric potential distribution in FTJ, that is generated by a dead layer and imperfect charge screening at the interfaces.

Research Products

• [Journal Article] Coherent Epitaxy of a Ferroelectric Heterostructure on a Trilayered Buffer for Integration into Silicon (2016)
  • Author(s): H. Yamada, Y. Toyosaki, A. Sawa
  • Journal Title: Advanced Electronic Materials Volume: 2 Issue: 4
  • DOI: 10.1002/aelm.201500334
  • Peer Reviewed
• [Journal Article] Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3 (2015)
  • Author(s): Liang Liu, Atsushi Tsurumaki-Fuckuchi, Hiroyuki Yamada, Akihito Sawa
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 20
  • DOI: 10.1063/1.4936308
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions (2015)
  • Author(s): Hiroyuki Yamada, Atsushi Tsurumaki-Fukuchi, Masaki Kobayashi, Takuro Nagai, Yoshikiyo Toyosaki, Hiroshi Kumigashira, and Akihito Sawa
  • Journal Title: Advanced Functional Material Volume: - Issue: 18 Pages: 1-7
  • DOI: 10.1002/adfm.201500371
  • Peer Reviewed
• [Journal Article] 界面抵抗変化型不揮発性メモリ (2014)
  • Author(s): 澤彰仁, 福地 厚, Liang Liu, 浅沼周太郎, 山田浩之
  • Journal Title: 応用電子物性分科会誌 Volume: 20 Pages: 143-148
  • Acknowledgement Compliant
• [Journal Article] Modeling of Hysteretic Schottky Diode-Like Conduction in Pt/BiFeO3/SrRuO3 Switches (2014)
  • Author(s): Enrique Miranda, David Jimenez, Atsushi Tsurumaki-Fukuchi, Julio Blasco, Hiroyuki Yamada, Jordi Sune, Akihito Sawa
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 8
  • DOI: 10.1063/1.4894116
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Ferroelectric Resistive Switching Memories on Silicon (2016)
  • Author(s): 澤彰仁，山田 浩之，豊崎 喜精
  • Organizer: 16th IEEE Non‐Volatile Memory Technology Symposium
  • Place of Presentation: ピッツバーグ（アメリカ合衆国）
  • Year and Date: 2016-10-17
  • Int'l Joint Research / Invited
• [Presentation] 強誘電トンネル接合の抵抗スイッチング現象と不揮発性メモリ応用 (2016)
  • Author(s): 澤 彰仁、山田 浩之、福地 厚
  • Organizer: 日本物理学会2016年秋季大会
  • Place of Presentation: 金沢大学（石川県金沢市）
  • Year and Date: 2016-09-13
  • Invited
• [Presentation] Impact of surface termination on resistive switching properties of BaTiO3-based ferroelectric tunnel junctions (2016)
  • Author(s): 澤 彰仁、福地 厚、豊崎 喜精、山田 浩之
  • Organizer: 4th Workshop on Complex Oxides
  • Place of Presentation: ポルクロール (フランス)
  • Year and Date: 2016-06-13
  • Int'l Joint Research / Invited
• [Presentation] Nonvolatile resistive switching in interface-engineered ferroelectric junctions (2016)
  • Author(s): 澤彰仁，福地厚, 豊崎 喜精，山田 浩之
  • Organizer: CIMTEC 2016, 5th International Conference Smart and Multifunctional Materials, Structures and Systems
  • Place of Presentation: ペルージャ（イタリア）
  • Year and Date: 2016-06-05
  • Int'l Joint Research / Invited
• [Presentation] 強誘電トンネル接合におけるナノスケール界面キャラクタリゼーション (2016)
  • Author(s): 山田 浩之, 福地厚, 小林 正起, 長井拓郎, 豊崎 喜精, 組頭 広志, 澤彰仁
  • Organizer: 共用・計測合同シンポジウム 2016「先端計測の開発と共用のシナジーによるイノベーション」
  • Place of Presentation: （国研）物質・材料研究機構 （茨城県つくば市）
  • Year and Date: 2016-03-04
  • Invited
• [Presentation] Resistive Switching in Ferroelectric Junctions with Engineered Interfaces (2015)
  • Author(s): 澤 彰仁, 福地 厚, 豊崎 喜精, 山田 浩之
  • Organizer: 2015 Materials Research Society Fall Meeting
  • Place of Presentation: ボストン (アメリカ合衆国)
  • Year and Date: 2015-11-29
  • Int'l Joint Research / Invited
• [Presentation] Impact of Interface Structures on Ferroelectric Resistive Switching Characteristics (2015)
  • Author(s): 澤 彰仁, 福地 厚, 豊崎 喜精, 山田 浩之
  • Organizer: 15th Non-Volatile Memory Technology Symposium (NVMTS 2015)
  • Place of Presentation: 北京（中国）
  • Year and Date: 2015-10-12
  • Int'l Joint Research / Invited
• [Presentation] Strong Surface termination effect on electroresistance in ferroelectric tunnel junctions (2015)
  • Author(s): 山田 浩之, 福地厚, 小林 正起, 長井拓郎, 豊崎 喜精, 組頭 広志, 澤彰仁
  • Organizer: International Workshop on Oxide Electronics (WOE22)
  • Place of Presentation: パリ（フランス）
  • Year and Date: 2015-10-07
  • Int'l Joint Research
• [Presentation] 強誘電抵抗スイッチングにおける終端表面依存性 (2015)
  • Author(s): 山田浩之, 福地厚, 小林正起, 長井拓郎, 豊崎喜精, 組頭広志, 澤彰仁
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学（神奈川）
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Characteristics and Mechanism in Interface-Engineered Ferroelectric Resistive Switching Memory (2014)
  • Author(s): Akihito Sawa, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada
  • Organizer: 14th Non-Volatile Memory Technology Symposium
  • Place of Presentation: Jeju Grand Hotel, Jeju, Korea
  • Year and Date: 2014-10-27 – 2014-10-29
  • Invited
• [Presentation] 界面抵抗変化型不揮発性メモリ (2014)
  • Author(s): 澤彰仁, 福地 厚, Liang Liu, 浅沼周太郎, 山田浩之
  • Organizer: 応用物理学会応用電子物性分科会研究例会「次世代不揮発性メモリの最前線」
  • Place of Presentation: 首都大学東京秋葉原サテライトキャンパス（東京）
  • Year and Date: 2014-10-21
  • Invited
• [Presentation] Interface Type Resistive Switching in Metal Oxides (2014)
  • Author(s): Akihito Sawa
  • Organizer: Workshop on Microstructural Functionality: Dynamics, Adaption, and Self-Healing at the Nanoscale
  • Place of Presentation: Mercatorhalle Duisburg, Duisburg, Germany
  • Year and Date: 2014-04-28 – 2014-04-30
  • Invited
• [Presentation] Switching Mechanism of Ferroelectric Resistive Switching Memory Based on a Dielectric/Ferroelectric Composite Structure (2014)
  • Author(s): Akihito Sawa, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada
  • Organizer: 2014 Materials Research Society Spring Meeting
  • Place of Presentation: San Francisco Marriott Marquis, San Francisco, USA
  • Year and Date: 2014-04-21 – 2014-04-25
• [Patent(Industrial Property Rights)] トンネル接合素子及び不揮発性メモリ素子 (2020)
  • Inventor(s): 山田 浩之, 澤 彰仁
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-193011
  • Acquisition Date: 2020
• [Patent(Industrial Property Rights)] 不揮発性メモリ素子 (2019)
  • Inventor(s): 山田 浩之, 澤 彰仁
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2015-001745
  • Acquisition Date: 2019
• [Patent(Industrial Property Rights)] トンネル接合素子及び不揮発性メモリ素子 (2016)
  • Inventor(s): 澤 彰仁, 山田 浩之
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-09-30