Creation of nanocarbon quantum-dot photoelectric conversion devices by intelligent plasma control
| Project/Area Number |
26286069
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Plasma electronics
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| Research Institution | Tohoku University |
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Principal Investigator |
KANEKO Toshiro 東北大学, 工学(系)研究科(研究院), 教授 (30312599)
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| Co-Investigator(Kenkyū-buntansha) |
加藤 俊顕 東北大学, 工学(系)研究科(研究院), 講師 (20502082)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
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| Keywords | 気液界面プラズマ / ナノグラフェン / 量子ドット / 光電変換デバイス / 多重励起子生成 / 遷移金属ダイカルコゲナイド |
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| Outline of Final Research Achievements |
In order to create novel photoelectric conversion devices which can generate multiple excitons in the full-spectrum light region, we synthesized the n-type semiconducting carbon nanotube (CNT) which can extract the excitons from the nano-graphene or transition metal dichalcogenide (TMD), and then, fabricated the CNT/graphene・TMD photoelectric conversion devices. In the beginning, it was clarified that the nano-graphene can be formed on the CNT surface by irradiating the CNT with the methane plasma. We tried to dope nitrogen or cesium ions into the CNT by plasma ion irradiation method, and found that the n-type semiconducting CNT can be synthesized. Furthermore, we fabricated the CNT/TMD photoelectric conversion device and succeeded in photovoltaic power generation using the CNT/TMD device for the first time.
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Report
(4 results)
Research Products
(124 results)
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[Journal Article] Individualized p-Doped Carbon Nanohorns2016
Author(s)
A. Stergiou, Z. Liu, B. Xu, T. Kaneko, C. P. Ewels, K. Suenaga, M. F. Zhang, M. Yudasaka, and N. Tagmatarchis
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Journal Title
Angewandte Chemie-International Edition
Volume: 55
Issue: 35
Pages: 10468-10472
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Presentation] 2次元原子層物質の構造制御合成と光電子デバイス応用2016
Author(s)
加藤 俊顕, 金子 俊郎
Organizer
電子情報通信学会 シリコン材料デバイス研究会（SDM) 応用物理学会シリコンテクノロジー分科会共催 「MOSデバイス・メモリ高性能化－材料・プロセス技術」
Place of Presentation
キャンパス・イノベーションセンター東京 (東京都, 港区)
Related Report
Invited
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[Presentation] CVD synthesis of monolayer transition metal dichalcogenides2015
Author(s)
T. Takahashi, T. Kato and T. Kaneko
Organizer
7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
Place of Presentation
Nagoya University (Nagoya, Japan)
Year and Date
2015-03-30
Related Report
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