| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
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| Outline of Final Research Achievements |
In order to create novel photoelectric conversion devices which can generate multiple excitons in the full-spectrum light region, we synthesized the n-type semiconducting carbon nanotube (CNT) which can extract the excitons from the nano-graphene or transition metal dichalcogenide (TMD), and then, fabricated the CNT/graphene・TMD photoelectric conversion devices. In the beginning, it was clarified that the nano-graphene can be formed on the CNT surface by irradiating the CNT with the methane plasma. We tried to dope nitrogen or cesium ions into the CNT by plasma ion irradiation method, and found that the n-type semiconducting CNT can be synthesized. Furthermore, we fabricated the CNT/TMD photoelectric conversion device and succeeded in photovoltaic power generation using the CNT/TMD device for the first time.
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