Structural study on external voltage control of physical properties
Project/Area Number |
26287080
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Condensed matter physics II
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Research Institution | Osaka University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
野内 亮 大阪府立大学, 工学(系)研究科(研究院), 准教授 (70452406)
千葉 大地 東京大学, 工学(系)研究科(研究院), 准教授 (10505241)
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Project Period (FY) |
2014-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2017: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
|
Keywords | 分子性固体・有機導体 / 表面・界面 / 酸化物デバイス / 放射光 / 物性実験 / 表面・界面物性 / X線 / 固液界面 / 分子性固体 / 電池材料 / 有機導体 / 界面 / 有機半導体 |
Outline of Final Research Achievements |
In order to understand the process of external control of magnetic/transport properties of materials, we have performed non-contact measurements of interfacial structures of various functional materials. Cobalt ultrathin films, which vary their Curie temperature by applied electric voltage, shows no structural change caused by the voltage. In contrast, the self assembled monolayers on electrode changes their conformation. Such structural switching caused by the external voltage is used for the control of the work function of the electrode with respect to the HOMO level of the organic semiconductor to reduce the contact resistivity. In the course of this study, we have developed a new method of the surface structure analysis based on the informatics, which helps future studies a lot.
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Report
(5 results)
Research Products
(69 results)
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[Journal Article] Chemical and orbital fluctuations in Ba3CuSb2O92016
Author(s)
Y. Wakabayashi, D. Nakajima, Y. Ishiguro, K. Kimura, T. Kimura, S. Tsutsui, A. Q. R. Baron, K. Hayashi, N. Happo, S. Hosokawa, K. Ohwada, and S. Nakatsuji
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Journal Title
Physical Review B
Volume: 93
Issue: 24
Pages: 245117-245117
DOI
NAID
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Presentation] 表面X線回折法を用いた構造解析によるペロブスカイト型Ni酸化物薄膜の金属絶縁体転移の起源の考察2018
Author(s)
穴田壮人, 小和一弘, 前田裕貴, 北村未歩, 坂井延寿, 組頭広志, 坂田修身, 中西(大野)義典, 岡田真人, 木村剛, 若林裕助
Organizer
日本物理学会 第73回年次大会
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[Presentation] 有機半導体の表面構造解析2015
Author(s)
若林裕助
Organizer
日本結晶学会平成27年度年会
Place of Presentation
大阪府立大学 中百舌鳥キャンパス(堺市)
Year and Date
2015-10-18
Related Report
Invited
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