| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2014: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Outline of Final Research Achievements |
The purposes of this study are 1) to fabricate Ni- and Co-ferrite thin films on Si substrates, which can be applied to Si-based spin metal-oxide field-effect transistors, and 2) to clarify the relation between their structures and magnetism, particularly very thin film thickness enough for electron tunneling.
We established a technique to fabricate Ni-ferrite thin films on Si(111) structures, which do not have a interfacial SiOx layer and have a good magnetic properties. We also revealed that the relation between the crystalline properties and magnetism of Co-ferrite films with various thicknesses, by analyzing X-ray magnetic dichroism signals with an established analysis method.
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