| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
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| Outline of Final Research Achievements |
In recent years, it is urgent to develop novel semiconductor materials such as wide band-gap semiconductor (such as SiC, GaN and diamond) or semiconductor materials with selective band gap. Amorphous carbon (a-C, diamond like carbon) is expected to be novel wide gap semiconductor material because it shows higher optical gap of 4.0 eV and higher carrier mobility comparable to GaN. In this study, semiconductor materials with selective optical gap and higher semiconductor properties were tried to be realized by introducing foreign atoms in a-C. High performance n-type Si-added a-C semiconductor with optical gap ranging from 1.2 to 2.7 eV and p-type Si-added a-C with optical gaps ranging from 1.8 to 2.5 eV could be successfully synthesized by using an anode-coupling type r. f. plasma CVD method with higher r. f. frequency. Hetero-pn junctions of these n- and p-type amorphous semiconductor and single crystal Si were confirmed to be functioned as a photovoltaic cell.
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