Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices
| Project/Area Number |
26289090
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
Wang Dong 九州大学, 総合理工学研究科(研究院), 准教授 (10419616)
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| Co-Investigator(Kenkyū-buntansha) |
中島 寛 九州大学, 産学連携センター, 教授 (70172301)
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| Co-Investigator(Renkei-kenkyūsha) |
HAMAMOTO Kiichi 九州大学, 総合理工学研究科, 教授 (70404027)
YAMAMOTO Keisuke 九州大学, 総合理工学研究科, 助教 (20706387)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2016: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2014: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
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| Keywords | Ge光素子 / 金属/半導体コンタクト / Siフォトニクス / CMOS / 電子・電気材料 / 電子密度 / GOI / Ge-光素子 / 局所歪み / 局所歪 |
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| Outline of Final Research Achievements |
Direct-band-gap electroluminescence (EL) spectra was clearly observed by using asymmetric lateral metal/Ge/metal structure, which enables a highly-efficient injection of minority carriers. The main target of this research was obtained by employing a PtGe/Ge contact with extremely low barrier height for holes, and a SiO2/GeO2 bilayer passivation. As the result, EL efficiency was enhanced by 10 times and the dark current density was decreased by 1 order. An on/off ratio of 10,000 and a responsivity of 0.7 A/W were also achieved, which is superior to the research target of 0.4 A/W. The electron density of Ge substrates was successfully controlled in a wide region by Sb doping. By using a highly-doped n-type Ge substrate, the EL efficiency was furtherly enhanced by 3 times.
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Report
(4 results)
Research Products
(62 results)
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[Presentation] Characterization of Ge Tunnel FET with Metal/Ge Junction2016
Author(s)
K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
Organizer
7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
Place of Presentation
Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
Year and Date
2016-06-09
Related Report
Int'l Joint Research
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[Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015
Author(s)
Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
Organizer
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
Place of Presentation
The University of Montreal, Quebec, Canada
Year and Date
2015-05-19
Related Report
Int'l Joint Research / Invited
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[Presentation] Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge2014
Author(s)
Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
Organizer
JSPS Core-to-Core Program,“Atomically Controlled Processsing for Ultralarge Scale Integration”
Place of Presentation
Leuven, Belgium
Year and Date
2014-11-03
Related Report
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