| Project/Area Number |
26289090
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
Wang Dong 九州大学, 総合理工学研究科(研究院), 准教授 (10419616)
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| Co-Investigator(Kenkyū-buntansha) |
中島 寛 九州大学, 産学連携センター, 教授 (70172301)
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| Co-Investigator(Renkei-kenkyūsha) |
HAMAMOTO Kiichi 九州大学, 総合理工学研究科, 教授 (70404027)
YAMAMOTO Keisuke 九州大学, 総合理工学研究科, 助教 (20706387)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2016: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2014: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
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| Keywords | Ge光素子 / 金属/半導体コンタクト / Siフォトニクス / CMOS / 電子・電気材料 / 電子密度 / GOI / Ge-光素子 / 局所歪み / 局所歪 |
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| Outline of Final Research Achievements |
Direct-band-gap electroluminescence (EL) spectra was clearly observed by using asymmetric lateral metal/Ge/metal structure, which enables a highly-efficient injection of minority carriers. The main target of this research was obtained by employing a PtGe/Ge contact with extremely low barrier height for holes, and a SiO2/GeO2 bilayer passivation. As the result, EL efficiency was enhanced by 10 times and the dark current density was decreased by 1 order. An on/off ratio of 10,000 and a responsivity of 0.7 A/W were also achieved, which is superior to the research target of 0.4 A/W. The electron density of Ge substrates was successfully controlled in a wide region by Sb doping. By using a highly-doped n-type Ge substrate, the EL efficiency was furtherly enhanced by 3 times.
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