| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2014: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
The purpose of this study is to control the band structure of semiconducting iron silicide by introducing anisotropic strain. The evaluation technology of strain, the strain relaxation mechanism, the epitaxial growth of iron silicide on strain relaxed SiGe, and photoluminescence(PL) lifetime were investigated. evaluated. As a result, a strain evaluation technique by polarized Raman spectroscopy was established. The strain relaxation due to Si defects was confirmed. The epitaxial growth of iron silicide on strain relaxed SiGe was succeeded for the first time. In the investigation of photoluminescence lifetime, the intrinsic PL lifetime due to the band-to-band transition of iron silicide was obtained.
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