| Project/Area Number |
26289097
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
Inoue Koji 東北大学, 金属材料研究所, 准教授 (50344718)
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| Co-Investigator(Kenkyū-buntansha) |
永井 康介 東北大学, 金属材料研究所, 教授 (10302209)
清水 康雄 東北大学, 金属材料研究所, 助教 (40581963)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2016: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
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| Keywords | アトムプローブ / 粒界拡散 / ドーパント / マイクロ・ナノデバイス / 拡散 |
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| Outline of Final Research Achievements |
In order to investigate the dopant diffusion path of P and B in n- and p-types polycrystalline（poly-）-Si gates of trench-type three dimensional metal-oxide-semiconductor field-effect transistors, the annealing time dependence of the dopant distribution at 900℃ were analyzed by atom probe tomography. Remarkable differences between P and B diffusion behavior were observed. P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type poly-Si gate. With longer annealing times, segregation of P on the grain boundaries was clearly observed. These results show that P atoms diffuse along grain boundaries much faster than through the bulk. On the other hand, in the p-type poly-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk.
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