Dopant diffusion paths in polycrystalline silicon gate of three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
| Project/Area Number |
26289097
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
Inoue Koji 東北大学, 金属材料研究所, 准教授 (50344718)
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| Co-Investigator(Kenkyū-buntansha) |
永井 康介 東北大学, 金属材料研究所, 教授 (10302209)
清水 康雄 東北大学, 金属材料研究所, 助教 (40581963)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2016: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
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| Keywords | アトムプローブ / 粒界拡散 / ドーパント / マイクロ・ナノデバイス / 拡散 |
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| Outline of Final Research Achievements |
In order to investigate the dopant diffusion path of P and B in n- and p-types polycrystalline（poly-）-Si gates of trench-type three dimensional metal-oxide-semiconductor field-effect transistors, the annealing time dependence of the dopant distribution at 900℃ were analyzed by atom probe tomography. Remarkable differences between P and B diffusion behavior were observed. P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type poly-Si gate. With longer annealing times, segregation of P on the grain boundaries was clearly observed. These results show that P atoms diffuse along grain boundaries much faster than through the bulk. On the other hand, in the p-type poly-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk.
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Report
(4 results)
Research Products
(12 results)
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[Journal Article] Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography2016
Author(s)
Y. Kunimune, Y. Shimada, Y. Sakurai, M. Inoue, A. Nishida, B. Han, Y. Tu, H. Takamizawa, Y. Shimizu, K. Inoue, F. Yano, Y. Nagai, T. Katayama, and T. Ide
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Journal Title
AIP Advances
Volume: 6
Issue: 4
DOI
Related Report
Peer Reviewed / Open Access
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