| Budget Amount *help |
¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2014: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
|
|---|
| Outline of Final Research Achievements |
Key components and techniques have been developed to construct plasmonic integrated circuits consisting of surface plasmon and electron devices on a silicon substrate. A metal waveguide having a trench structure was developed to obtain electrical isolation without any interruption of surface plasmon propagation. A metal waveguide with multiple slits was also developed to control the propagation direction of surface plasmon by changing the slit pitch. These waveguides were connected to the gate electrode of a MOSFET, and the multiple-signal or beat-signal operations of the MOSFET were experimentally confirmed. In addition, a half adder consisting of multiple single- and multi-mode waveguides was designed, and the performances were experimentally confirmed. These waveguides and components will be key factors for high-speed plasmonic integrated circuits merged with electronic components.
|
