| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2015: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2014: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Outline of Final Research Achievements |
We carried out a unique and systematic characterization of single Si/SiO2 interface traps using the charge pumping (CP) method, and observed for the first time that two energy levels participate in electron capture/emission processes in a single trap, and the maximum CP current (ICPMAX) from a single trap is in the range of 0-2fq, where f is the gate pulse frequency, and q is the electron charge. Although it is widely believed that ICPMAX is a fixed value of fq, we experimentally clarified that this belief is basically incorrect. Based on the systematic characterization of the single traps, we estimated the distribution of the two energy levels of the single traps for the first time. By considering the essential nature of the traps, we corrected a widely held misconception and introduced a fundamental refinement of the CP theory.
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