Development of detection and characterization techniques of single traps and innovative progress of trap physics
| Project/Area Number |
26289105
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shimane University |
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Principal Investigator |
Tsuchiya Toshiaki 島根大学, 総合理工学研究科(研究院), 教授 (20304248)
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| Co-Investigator(Kenkyū-buntansha) |
小野 行徳 富山大学, 大学院理工学研究部(工学), 教授 (80374073)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2015: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2014: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Keywords | 電子デバイス・電子機器 / マイクロ・ナノデバイス / 表面・界面物性 |
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| Outline of Final Research Achievements |
We carried out a unique and systematic characterization of single Si/SiO2 interface traps using the charge pumping (CP) method, and observed for the first time that two energy levels participate in electron capture/emission processes in a single trap, and the maximum CP current (ICPMAX) from a single trap is in the range of 0-2fq, where f is the gate pulse frequency, and q is the electron charge. Although it is widely believed that ICPMAX is a fixed value of fq, we experimentally clarified that this belief is basically incorrect. Based on the systematic characterization of the single traps, we estimated the distribution of the two energy levels of the single traps for the first time. By considering the essential nature of the traps, we corrected a widely held misconception and introduced a fundamental refinement of the CP theory.
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Report
(4 results)
Research Products
(38 results)
