In-situ doping of high-quality boron nitride semiconductors

• Project/Area Number: 26289241
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Kyushu University
• Principal Investigator: TEII Kungen 九州大学, 総合理工学研究院, 准教授 (10335995)
• Research Collaborator: MATSUMOTO Seiichiro
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000); Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
• Keywords: プラズマ加工 / 半導体物性 / 電子・電気材料 / 材料加工・処理 / 先端機能デバイス

Outline of Final Research Achievements

For effective use of energy and development of high performance electric and electronic devices, power devices using wide band gap semiconductors are increasingly required. In this study, boron nitride films were doped by adding dopants to the reaction field in vapor phase deposition process using a discharge plasma. As a result, the doping condition for increasing the electrical conduction of the films was found and the research direction for controlling the electrical conduction was established by characterization of the structure, composition, and electrical properties of the films.