| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Outline of Final Research Achievements |
We fabricate various noble metal nanoparticles on silicon by electroless displacement deposition using a metal salt solution including hydrofluoric acid, and apply them to metal-assisted etching of silicon, autocatalytic electroless deposition of metal on silicon, efficient solar cell fabrication, and noble metal recovery from waste electrical and electronic equipment. Single crystalline gold nanoparticles are epitaxially deposited on silicon wafers. Such gold nanoparticles work not only as catalytic nuclei to initiate autocatalytic electroless metal deposition but also as binding points between the deposited metal film and the silicon surface. The metal-assisted etching can produce porous silicon having wide range of pore size between few nm to a hundred um by changing etching conditions. It has been found that electroless displacement deposition using basic aqueous solution excluding fluoride can recover gold from a leaching solution.
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