| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
A lot of manufacturing equipment and processes must be generally required for fabrication of semiconductor devices, and it is difficult for many colleges of technology to make the semiconductor devices in engineering experiments which are regarded as important at colleges of technology. It is expected that students studying at colleges of technology effectively acquire expertise in semiconductor engineering through the practical experience of experiments. Therefore, we developed an educational resource of MOS field effect transistor (MOSFET) fabrication by using simplified process. The fabrication process of MOSFET is simplified by using PSG thin film as a thermal diffusion source and also a metal mask to form aluminum electrodes. As a result, we could fabricate a MOSFET which has typical current-voltage characteristics by simplified fabrication process.
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