Studies on interband and intersubband mid- and far-infrared quantum well lasers
| Project/Area Number |
26390009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanostructural physics
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Research Collaborator |
Nakashima Seisuke
Watanabe Shouji
Aofuji Yui
Akikawa Hiroki
Felder Ferdinand
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 中赤外レーザ / IV-VI族半導体 / 量子カスケードレーザ / 遠赤外レーザ / 中赤外線レーザ / テラヘルツレーザ / 量子井戸 / 長波長赤外線レーザ / 面発光レーザ / 鉛塩半導体 |
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| Outline of Final Research Achievements |
Interband mid-infrared lasers based on PbTe and PbS quantum wells and far-infrared quantum cascade lasers in the 25-50μm region were studied. Heteroepitaxial growth of PbTe and PbS based films and quantum wells on Si substrate with high thermal conductivity was successfully performed, and room-temperature pulsed laser operation was obtained in SrS/PbS quntum-well system. In quantum cascade lasers, stable growth of low carrier concentration quantum well is necessary, and we proposed EuTe/PbSnTe:In quantum well system in which In impurity level can keep the low carrier concentration.
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Report
(4 results)
Research Products
(6 results)
