| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Outline of Final Research Achievements |
Nanowires (NWs) of SnO2 and β-Ga2O3 were successfully grown by atmospheric-pressure CVD utilizing vapor-liquid-solid growth under alternate source supply (ASS) of metal (Sn or Ga) and H2O. The SnO2 NWs average diameter increased slightly with increasing growth temperature (Tg). However, the SnO2 NWs average diameter was found to be almost independent of the cycle number of the source supply sequence. This fact suggests that the enhancement of the NWs average diameter due to vapor-solid growth is effectively suppressed by introducing ASS. As with the case of the SnO2 NWs, the β-Ga2O3 NWs average diameter tended to increase slightly with increasing Tg under the ASS. Photoluminescence from both the SnO2 and β-Ga2O3 NWs were dominated by the broad visible emissions associated with the structural defects. It was also found that both sensitizer CuO and Cu2O films can be selectively grown from the same Cu precursor by chemical bath deposition with the assistance of a Fe plate.
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