高効率太陽電池作製のためのGe添加によるn型Si欠陥制御

• Project/Area Number: 26390052
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Shizuoka University
• Principal Investigator: ムカンナン アリバナンドハン 静岡大学, 電子工学研究所, 助教 (50451620)
• Co-Investigator(Kenkyū-buntansha): 早川 泰弘 静岡大学, 電子工学研究所, 教授 (00115453) ; 稲富 裕光 独立行政法人宇宙航空研究開発機構, その他部局等, 教授 (50249934)
• Project Period (FY): 2014-04-01 – 2015-03-31
• Project Status: Discontinued (Fiscal Year 2014)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2014: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
• Keywords: シリコン / シリコンゲンルニウム / 太陽電池 / 寿命 / ドーピング / X線透過法

Outline of Annual Research Achievements

シリコン太陽電池の変換効率は約20 %であり、変換効率のさらなる向上が求められている。太陽電池の変換効率を高くするためには、結晶欠陥発生を抑制することが必要である。本研究は、太陽電池の変換効率を向上させるために、偏析係数の大きなゲルマニム(Ge)に注目し、(1) Ge添加がSi結晶中のボイド欠陥形成および光照射による結晶品質劣化に及ぼす効果と(2) P及びSb添加多結晶Siにおける欠陥とキャリア寿命に対するGe添加効果および(3)SiGeバルク結晶成長を実施した。n型添加濃度を一定にし、Ge濃度を変えたSi結晶を一方向性凝固法で成長させた。また、比較のために同じ冷却速度成長条件でGe無添加結晶を成長させた。その結果、Ge低濃度添加の場合、Si結晶の劣化が抑制される現象を見出した。これは、Ge-空孔の複合体が不均一核形成センターとして働くことで、酸素析出物を形成し、その結果として格子間酸素濃度が減少することが要因であった。さらに、温度差徐冷法によるGa添加均一組成SiGeバルク結成長技術を開発するために、X線透過法を用いてGe融液中へSi結晶の溶解過程とSiGe結晶成長過程をその場観察し、温度勾配の効果を明らかにした。結晶溶解と成長過程に対して溶液対流が大きな影響を及ぼすことが示された。この知見を利用し、GaおよびSb添加均一組成SiGeバルク結晶を成長させた。

Research Products

• [Journal Article] High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method (2015)
  • Author(s): M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, D. Aswal, S. Bhattacharya, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
  • Journal Title: Journal of Crystal Growth & Design Volume: 15 Issue: 3 Pages: 1380-1388
  • DOI: 10.1021/cg501776h
  • Peer Reviewed / Open Access
• [Journal Article] Viscosity of Molten InSb, GaSb, and InxGa1-xSb alloy semiconductors (2014)
  • Author(s): K. Sakata, M. Mukai, G. Rajesh, M. Arivanandhan, Y. Inatomi, T. Ishikawa, Y. Hayakawa
  • Journal Title: International Journal of Thermophysics Volume: 35 Issue: 2 Pages: 352-360
  • DOI: 10.1007/s10765-014-1582-8
  • Peer Reviewed
• [Journal Article] Tailoring bismuth telluride nanostructures using a scalable sintering process and their thermoelectric properties (2014)
  • Author(s): P.Anandan, M.Omplrakash, M.Arivanandhan, D.Rajan Babu, T.Koyama and Y.Hayakawa
  • Journal Title: CrystEngComm Volume: 16 Issue: 34 Pages: 7956-7962
  • DOI: 10.1039/c4ce00837e
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] The Effect of Hippuric Acid on Crystal Growth, Structural and Optical Properties of ZTS Single Crystals (2014)
  • Author(s): A.KUMARESH, R.ARUN KUMAR, M.ARIVANANDHAN and Y.HAYAKAWA
  • Journal Title: J.Crystal Growth Volume: 401 Pages: 874-877
  • DOI: 10.1016/j.jcrysgro.2014.01.006
  • Peer Reviewed
• [Journal Article] Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station (2014)
  • Author(s): K. Sakata, M. Midori, M. Arivanandhan, G. Rajesh, T. Ishikawa, Y. Inatomi and Y. Hayakawa
  • Journal Title: TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, AEROSPACE TECHNOLOGY JAPAN Volume: 12 Issue: ists29 Pages: Ph_31-Ph_35
  • DOI: 10.2322/tastj.12.Ph_31
  • NAID: 130004701804
  • ISSN: 1884-0485
  • Peer Reviewed / Open Access
• [Presentation] Growth of Homogeneous P-type and N-type Si1-xGex for Thermoelectric Application (2015)
  • Author(s): Y.HAYAKAWA, M.ARIVANANDHAN, M.OMPRAKASH, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA. Y.INATOMI, D.K.ASWAL, S.BHATTACHARYA and S.MOORTHY BABU
  • Organizer: International Conference on Nanoscience and Nanotechnology (ICONN 2015
  • Place of Presentation: SRM University, Kattankulathur, Kancheepuram,India
  • Year and Date: 2015-02-04 – 2015-02-06
  • Invited
• [Presentation] Growth of Compositionally Homogeneous P-type SiGe Bulk and Thermoelectric Properties” (2015)
  • Author(s): M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, D.K.ASWAL, S.BHATTACHARYA, Y.OKANO, T.OZAWA, Y.INATOMI, S. MOORTHY BABU and Y.HAYAKAWA
  • Organizer: 2015 International Symposium toward the Future of Advanced Researches
  • Place of Presentation: Shizuoka University. Hamamatsu, Japan
  • Year and Date: 2015-01-27 – 2015-01-28
• [Presentation] Phonon-drag Contribution to Seebeck Coefficent in p-type Si, Ge and Si-Ge (2015)
  • Author(s): V.MANIMUTHU, M.OMPRAKASH, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.KAMAKURA, Y.HAYAKAWA and H.IKEDA
  • Organizer: 2015 International Symposium toward the Future of Advanced Researches
  • Place of Presentation: Shizuoka University. Hamamatsu, Japan
  • Year and Date: 2015-01-27 – 2015-01-28
• [Presentation] Thermoelectric Chracteristics of Ge and SiGe Nanostructures (2015)
  • Author(s): V.MANIMUTHU, M.OMPRAKASH, F.SALLEH, M.ARIVANANDHAN, Y.HAYAKAWA and H.IKEDA
  • Organizer: SRM University - Shizuoka University Joint Symposium
  • Place of Presentation: Shizuoka University, Hamamatsu, Japan
  • Year and Date: 2015-01-07
• [Presentation] The impact of Ge Codoping on Grown-in Microdefects and Photovoltaic Characteristics of B-doped Czockralski Grown Si Crystal (2014)
  • Author(s): M.ARIVANANDHAN, R.GOTOH, K.FUJIWARA, S.UDA, Y.HAYAKAWA and K.KONAGAI
  • Organizer: The Forum on the Science and Technology of Silicon Materials 201
  • Place of Presentation: Hamamatsu, Japan
  • Year and Date: 2014-10-19 – 2014-10-22
• [Presentation] Thermoelectric Characteristics of Si- and Ge-on-Insulator Layers for Predicting Those of SiGe Nanostructures (2014)
  • Author(s): V.MANIMUTHU, S.YOSHIDA, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.KAMAKURA, Y.HAYAKAWA and H.IKEDA
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2014
  • Place of Presentation: Hamamatsu,Japan
  • Year and Date: 2014-10-19 – 2014-10-21
• [Presentation] Thermoelectric Properties of Compositionally Homogeneous Ga-doped SiGe Bulk Crystals (2014)
  • Author(s): Y.HAYAKAWA, M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI and S. MOORTHY BABU
  • Organizer: 12th European Conference on Thermoelectricity (ECT2014)
  • Place of Presentation: Madrid, Spain
  • Year and Date: 2014-09-24 – 2014-09-26
• [Presentation] Growth of Compositionally Homogeneous P-type Si1-xGex Bulk Crystal for Thermoelectric Application (2014)
  • Author(s): M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU, D.K. ASWAL, S. BHATTACHARYA and Y.HAYAKAWA
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス,北海道札幌市
  • Year and Date: 2014-09-17 – 2014-09-29
• [Presentation] In-situ Observation of Dissolution and Growth Processes of Si1-xGex in Different Temperature Gradient (2014)
  • Author(s): M.OMPRAKASH, M.ARIVANANDHAN, H.MORII, T.AOKI, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU and Y.HAYAKAWA
  • Organizer: 13th International Conference on Global Research and Education (Inter-Academia 2014)
  • Place of Presentation: Riga Technical University, Riga, Latvia
  • Year and Date: 2014-09-10 – 2014-09-12
• [Presentation] Growth of InGaSb Alloy Semiconductor Crystal under 1G Condition as A Preliminary Study for Microgravity Experiment at International Space Station (2014)
  • Author(s): V.NIRMAL KUMAR, M.ARIVANANDHAN, G.RAJESH, T.KOYAMA, Y.MOMOSE, Y.INATOMI, K.SAKATA, T.ISHIKAWA, M.TAKAYANAGI, S.KAMIGAICHI, T.OZAWA, Y.OKANO and Y.HAYAKAWA
  • Organizer: 13th International Conference on Global Research and Education (Inter-Academia 2014)
  • Place of Presentation: Riga Technical University, Riga, Latvia
  • Year and Date: 2014-09-10 – 2014-09-12
• [Presentation] Ga Doped Si1-xGex Bulk Crystal with Homogenous Compositon and Its Thermoelectric Properties (2014)
  • Author(s): M.OMPRAKASH, V. NIRMAL KUMAR, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU and Y.HAYAKAWA
  • Organizer: International Conference and Summar School on Advanced Silicide Technology 2014
  • Place of Presentation: Tokyo University of Science, Katsushika Campus, Tokyo, Japan
  • Year and Date: 2014-07-19 – 2014-07-21
• [Presentation] Seebeck Coefficient of Germanium-on-Insulator for High-Sensitive Infrared Photodetector (2014)
  • Author(s): V.MANIMUTHU, S.YOSHIDA, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.HAYAKAWA and H.IKEDA
  • Organizer: 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Kanazawa Bunka Hall, Kanazawa, Japan
  • Year and Date: 2014-07-01 – 2014-07-03
• [Remarks]
  • URL: http://maruhan.rie.shizuoka.ac.jp/