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高効率太陽電池作製のためのGe添加によるn型Si欠陥制御

Research Project

Project/Area Number 26390052
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionShizuoka University

Principal Investigator

ムカンナン アリバナンドハン  静岡大学, 電子工学研究所, 助教 (50451620)

Co-Investigator(Kenkyū-buntansha) 早川 泰弘  静岡大学, 電子工学研究所, 教授 (00115453)
稲富 裕光  独立行政法人宇宙航空研究開発機構, その他部局等, 教授 (50249934)
Project Period (FY) 2014-04-01 – 2015-03-31
Project Status Discontinued (Fiscal Year 2014)
Budget Amount *help
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Keywordsシリコン / シリコンゲンルニウム / 太陽電池 / 寿命 / ドーピング / X線透過法
Outline of Annual Research Achievements

シリコン太陽電池の変換効率は約20 %であり、変換効率のさらなる向上が求められている。太陽電池の変換効率を高くするためには、結晶欠陥発生を抑制することが必要である。本研究は、太陽電池の変換効率を向上させるために、偏析係数の大きなゲルマニム(Ge)に注目し、(1) Ge添加がSi結晶中のボイド欠陥形成および光照射による結晶品質劣化に及ぼす効果と(2) P及びSb添加多結晶Siにおける欠陥とキャリア寿命に対するGe添加効果および(3)SiGeバルク結晶成長を実施した。n型添加濃度を一定にし、Ge濃度を変えたSi結晶を一方向性凝固法で成長させた。また、比較のために同じ冷却速度成長条件でGe無添加結晶を成長させた。その結果、Ge低濃度添加の場合、Si結晶の劣化が抑制される現象を見出した。これは、Ge-空孔の複合体が不均一核形成センターとして働くことで、酸素析出物を形成し、その結果として格子間酸素濃度が減少することが要因であった。さらに、温度差徐冷法によるGa添加均一組成SiGeバルク結成長技術を開発するために、X線透過法を用いてGe融液中へSi結晶の溶解過程とSiGe結晶成長過程をその場観察し、温度勾配の効果を明らかにした。結晶溶解と成長過程に対して溶液対流が大きな影響を及ぼすことが示された。この知見を利用し、GaおよびSb添加均一組成SiGeバルク結晶を成長させた。

Report

(1 results)
  • 2014 Annual Research Report
  • Research Products

    (18 results)

All 2015 2014 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Open Access: 3 results,  Acknowledgement Compliant: 1 results) Presentation (12 results) (of which Invited: 1 results) Remarks (1 results)

  • [Journal Article] High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method2015

    • Author(s)
      M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, D. Aswal, S. Bhattacharya, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
    • Journal Title

      Journal of Crystal Growth & Design

      Volume: 15 Issue: 3 Pages: 1380-1388

    • DOI

      10.1021/cg501776h

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Viscosity of Molten InSb, GaSb, and InxGa1-xSb alloy semiconductors2014

    • Author(s)
      K. Sakata, M. Mukai, G. Rajesh, M. Arivanandhan, Y. Inatomi, T. Ishikawa, Y. Hayakawa
    • Journal Title

      International Journal of Thermophysics

      Volume: 35 Issue: 2 Pages: 352-360

    • DOI

      10.1007/s10765-014-1582-8

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Tailoring bismuth telluride nanostructures using a scalable sintering process and their thermoelectric properties2014

    • Author(s)
      P.Anandan, M.Omplrakash, M.Arivanandhan, D.Rajan Babu, T.Koyama and Y.Hayakawa
    • Journal Title

      CrystEngComm

      Volume: 16 Issue: 34 Pages: 7956-7962

    • DOI

      10.1039/c4ce00837e

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] The Effect of Hippuric Acid on Crystal Growth, Structural and Optical Properties of ZTS Single Crystals2014

    • Author(s)
      A.KUMARESH, R.ARUN KUMAR, M.ARIVANANDHAN and Y.HAYAKAWA
    • Journal Title

      J.Crystal Growth

      Volume: 401 Pages: 874-877

    • DOI

      10.1016/j.jcrysgro.2014.01.006

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station2014

    • Author(s)
      K. Sakata, M. Midori, M. Arivanandhan, G. Rajesh, T. Ishikawa, Y. Inatomi and Y. Hayakawa
    • Journal Title

      TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES, AEROSPACE TECHNOLOGY JAPAN

      Volume: 12 Issue: ists29 Pages: Ph_31-Ph_35

    • DOI

      10.2322/tastj.12.Ph_31

    • NAID

      130004701804

    • ISSN
      1884-0485
    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] Growth of Homogeneous P-type and N-type Si1-xGex for Thermoelectric Application2015

    • Author(s)
      Y.HAYAKAWA, M.ARIVANANDHAN, M.OMPRAKASH, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA. Y.INATOMI, D.K.ASWAL, S.BHATTACHARYA and S.MOORTHY BABU
    • Organizer
      International Conference on Nanoscience and Nanotechnology (ICONN 2015
    • Place of Presentation
      SRM University, Kattankulathur, Kancheepuram,India
    • Year and Date
      2015-02-04 – 2015-02-06
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Growth of Compositionally Homogeneous P-type SiGe Bulk and Thermoelectric Properties”2015

    • Author(s)
      M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, D.K.ASWAL, S.BHATTACHARYA, Y.OKANO, T.OZAWA, Y.INATOMI, S. MOORTHY BABU and Y.HAYAKAWA
    • Organizer
      2015 International Symposium toward the Future of Advanced Researches
    • Place of Presentation
      Shizuoka University. Hamamatsu, Japan
    • Year and Date
      2015-01-27 – 2015-01-28
    • Related Report
      2014 Annual Research Report
  • [Presentation] Phonon-drag Contribution to Seebeck Coefficent in p-type Si, Ge and Si-Ge2015

    • Author(s)
      V.MANIMUTHU, M.OMPRAKASH, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.KAMAKURA, Y.HAYAKAWA and H.IKEDA
    • Organizer
      2015 International Symposium toward the Future of Advanced Researches
    • Place of Presentation
      Shizuoka University. Hamamatsu, Japan
    • Year and Date
      2015-01-27 – 2015-01-28
    • Related Report
      2014 Annual Research Report
  • [Presentation] Thermoelectric Chracteristics of Ge and SiGe Nanostructures2015

    • Author(s)
      V.MANIMUTHU, M.OMPRAKASH, F.SALLEH, M.ARIVANANDHAN, Y.HAYAKAWA and H.IKEDA
    • Organizer
      SRM University - Shizuoka University Joint Symposium
    • Place of Presentation
      Shizuoka University, Hamamatsu, Japan
    • Year and Date
      2015-01-07
    • Related Report
      2014 Annual Research Report
  • [Presentation] The impact of Ge Codoping on Grown-in Microdefects and Photovoltaic Characteristics of B-doped Czockralski Grown Si Crystal2014

    • Author(s)
      M.ARIVANANDHAN, R.GOTOH, K.FUJIWARA, S.UDA, Y.HAYAKAWA and K.KONAGAI
    • Organizer
      The Forum on the Science and Technology of Silicon Materials 201
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2014-10-19 – 2014-10-22
    • Related Report
      2014 Annual Research Report
  • [Presentation] Thermoelectric Characteristics of Si- and Ge-on-Insulator Layers for Predicting Those of SiGe Nanostructures2014

    • Author(s)
      V.MANIMUTHU, S.YOSHIDA, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.KAMAKURA, Y.HAYAKAWA and H.IKEDA
    • Organizer
      The Forum on the Science and Technology of Silicon Materials 2014
    • Place of Presentation
      Hamamatsu,Japan
    • Year and Date
      2014-10-19 – 2014-10-21
    • Related Report
      2014 Annual Research Report
  • [Presentation] Thermoelectric Properties of Compositionally Homogeneous Ga-doped SiGe Bulk Crystals2014

    • Author(s)
      Y.HAYAKAWA, M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI and S. MOORTHY BABU
    • Organizer
      12th European Conference on Thermoelectricity (ECT2014)
    • Place of Presentation
      Madrid, Spain
    • Year and Date
      2014-09-24 – 2014-09-26
    • Related Report
      2014 Annual Research Report
  • [Presentation] Growth of Compositionally Homogeneous P-type Si1-xGex Bulk Crystal for Thermoelectric Application2014

    • Author(s)
      M.OMPRAKASH, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU, D.K. ASWAL, S. BHATTACHARYA and Y.HAYAKAWA
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス,北海道札幌市
    • Year and Date
      2014-09-17 – 2014-09-29
    • Related Report
      2014 Annual Research Report
  • [Presentation] In-situ Observation of Dissolution and Growth Processes of Si1-xGex in Different Temperature Gradient2014

    • Author(s)
      M.OMPRAKASH, M.ARIVANANDHAN, H.MORII, T.AOKI, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU and Y.HAYAKAWA
    • Organizer
      13th International Conference on Global Research and Education (Inter-Academia 2014)
    • Place of Presentation
      Riga Technical University, Riga, Latvia
    • Year and Date
      2014-09-10 – 2014-09-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Growth of InGaSb Alloy Semiconductor Crystal under 1G Condition as A Preliminary Study for Microgravity Experiment at International Space Station2014

    • Author(s)
      V.NIRMAL KUMAR, M.ARIVANANDHAN, G.RAJESH, T.KOYAMA, Y.MOMOSE, Y.INATOMI, K.SAKATA, T.ISHIKAWA, M.TAKAYANAGI, S.KAMIGAICHI, T.OZAWA, Y.OKANO and Y.HAYAKAWA
    • Organizer
      13th International Conference on Global Research and Education (Inter-Academia 2014)
    • Place of Presentation
      Riga Technical University, Riga, Latvia
    • Year and Date
      2014-09-10 – 2014-09-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ga Doped Si1-xGex Bulk Crystal with Homogenous Compositon and Its Thermoelectric Properties2014

    • Author(s)
      M.OMPRAKASH, V. NIRMAL KUMAR, M.ARIVANANDHAN, T.KOYAMA, Y.MOMOSE, H.IKEDA, H.TATSUOKA, Y.OKANO, T.OZAWA, Y.INATOMI, S.MOORTHY BABU and Y.HAYAKAWA
    • Organizer
      International Conference and Summar School on Advanced Silicide Technology 2014
    • Place of Presentation
      Tokyo University of Science, Katsushika Campus, Tokyo, Japan
    • Year and Date
      2014-07-19 – 2014-07-21
    • Related Report
      2014 Annual Research Report
  • [Presentation] Seebeck Coefficient of Germanium-on-Insulator for High-Sensitive Infrared Photodetector2014

    • Author(s)
      V.MANIMUTHU, S.YOSHIDA, Y.SUZUKI, F.SALLEH, M.ARIVANANDHAN, Y.HAYAKAWA and H.IKEDA
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa Bunka Hall, Kanazawa, Japan
    • Year and Date
      2014-07-01 – 2014-07-03
    • Related Report
      2014 Annual Research Report
  • [Remarks]

    • URL

      http://maruhan.rie.shizuoka.ac.jp/

    • Related Report
      2014 Annual Research Report

URL: 

Published: 2014-04-04   Modified: 2016-06-01  

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