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p-type conductivity control in ZnMgSTe alloy semiconductors by adjusting the valence-band-edge energy

Research Project

Project/Area Number 26390053
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionTottori University

Principal Investigator

Ichino Kunio  鳥取大学, 工学(系)研究科(研究院), 教授 (90263483)

Co-Investigator(Kenkyū-buntansha) 阿部 友紀  鳥取大学, 工学(系)研究科(研究院), 准教授 (20294340)
大観 光徳  鳥取大学, 工学(系)研究科(研究院), 教授 (90243378)
Research Collaborator KASHIYAMA Shota  
NANBA Nao  
HASEGAWA Hiroyasu  
KADOTA Masahiro  
SAHASHI Kyoma  
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
KeywordsZnMgSTe / ZnS / p-type / valence band / wide bandgap / ワイドバンドギャップ半導体 / p型 / ZnMgSTe混晶半導体
Outline of Final Research Achievements

We had previously achieved p-type conduction in wide-bandgap ZnS-based alloy, ZnSTe:N. On the basis of this achievement, we aimed at both wide bandgap and p-type conduction in Mg-added ZnMgSTe:N quaternary alloys, and have confirmed the validity of the idea. Specifically, we first improved the crystal quality of ZnSTe alloys. Although the growth of ZnMgSTe quaternary alloys had rarely been reported, we grew high quality ZnMgSTe quaternary alloys by adding Mg to the ZnSTe growth process. By characterizing the ZnMgSTe alloys, the bandgap was found to increase by increasing Mg content. Furthermore, by doping with N acceptors, the ZnMgSTe showed p-type conduction.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • 2014 Research-status Report
  • Research Products

    (7 results)

All 2017 2016 2015

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (6 results) (of which Int'l Joint Research: 1 results)

  • [Journal Article] ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers2016

    • Author(s)
      Kunio Ichino, Shota Kashiyama, Nao Nanba, Hiroyasu Hasegawa, and Tomoki Abe
    • Journal Title

      Phys. Status Solidi B

      Volume: 253 Issue: 8 Pages: 1476-1479

    • DOI

      10.1002/pssb.201600009

    • Related Report
      2016 Annual Research Report 2015 Research-status Report
    • Peer Reviewed
  • [Presentation] 分子線エピタキシー法によるGaP基板上へのZnMgSTeの作製と評価2017

    • Author(s)
      佐橋 響真、難波 直、門田 匡弘、長谷川 浩康、中島 賢宏、赤岩 和明、阿部 友紀、市野 邦男
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(横浜市)
    • Year and Date
      2017-03-17
    • Related Report
      2016 Annual Research Report
  • [Presentation] 分子線エピタキシー法によるN添加p-ZnSTeの作製と評価2016

    • Author(s)
      長谷川 浩康、中島 達也、大田 勝也、赤岩 和明、阿部 友紀、市野 邦男
    • Organizer
      2016年第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 分子線エピタキシャル成長ZnMgS/GaPの構造的評価2016

    • Author(s)
      門田 匡弘,樫山 翔太,佐橋 響真,阿部 友紀,市野 邦男
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-21
    • Related Report
      2015 Research-status Report
  • [Presentation] 分子線エピタキシャル成長ZnSTe/GaPの構造的評価2016

    • Author(s)
      難波 直,樫山 翔太,長谷川 浩康,佐橋 響真,阿部 友紀,市野 邦男
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-21
    • Related Report
      2015 Research-status Report
  • [Presentation] ZnSTe Lattice-matched to GaP Substrates Grown by Molecular Beam Epitaxy Using ZnS Buffer Layers2015

    • Author(s)
      K. Ichino, S. Kashiyama, N. Nanba, H. Hasegawa, and T. Abe
    • Organizer
      17th International Conference on II-VI Compounds and Related Materials
    • Place of Presentation
      Campus des Cordeliers, Paris, France
    • Year and Date
      2015-09-14
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] 分子線エピタキシー法によるGaP基板上のZnSTe成長層の構造的評価2015

    • Author(s)
      樫山翔太,難波直,長谷川浩康,阿部友紀,市野邦男
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Related Report
      2014 Research-status Report

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Published: 2014-04-04   Modified: 2018-03-22  

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