Generation and migration of plasma-induced defects in III-nitride semiconductors

• Project/Area Number: 26390056
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tokyo Metropolitan University
• Principal Investigator: NAKAMURA Seiji 首都大学東京, 理工学研究科, 准教授 (70336519)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
• Keywords: プラズマ照射誘起欠陥 / III族窒化物半導体 / バイアスアニール / プラズマダメージ / Ⅲ族窒化物半導体

Outline of Final Research Achievements

In this study, we have focused on the effect of the charge state of the plasma-induced defects responsible for the dopant deactivation in III-nitride semiconductors. Anneal experiments of the plasma-damaged GaN Schottky diodes were carried out in order to clarify the effects of bias voltage as well as the photoirradiation on the reactivation of the passivated dopants. We revealed that the charge state of the plasma-induced defect plays an important role in the reactivation of the passivated dopants as well as the migration.

Research Products

• [Journal Article] Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing (2014)
  • Author(s): Takuma Takimoto, Koji Takeshita, Seiji Nakamura, Tsugunori Okumura
  • Journal Title: Thin Solid Films Volume: 557 Pages: 212-215
  • DOI: 10.1016/j.tsf.2013.10.086
  • Peer Reviewed
• [Presentation] GaN中のプラズマ照射誘起欠陥の挙動解析(2) (2017)
  • Author(s): 井上 凌兵，若杉 勇作，中村 成志，奥村 次徳
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川県横浜市）
  • Year and Date: 2017-03-14
• [Presentation] GaN中のプラズマ照射誘起欠陥の挙動解析 (2016)
  • Author(s): 若杉 勇作，中村 成志，奥村 次徳
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-13
• [Presentation] n型およびp型GaN中のプラズマ照射誘起欠陥挙動 (2016)
  • Author(s): 古賀祐介，井上凌兵，中村成志，奥村次徳
  • Organizer: 2016年第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] フォトキャパシタンス測定によるGaN中のプラズマ照射誘起欠陥の評価 (2016)
  • Author(s): 折茂力都，大西健太，中村成志，奥村次徳
  • Organizer: 2016年第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] 伝導型の違いからみたGaN中プラズマ照射誘起欠陥の挙動解明 (2015)
  • Author(s): 古賀祐介，中村成志，奥村次徳
  • Organizer: 電子情報通信学会研究会(2015年11月ED研究会)
  • Place of Presentation: 大阪市立大学
  • Year and Date: 2015-11-26
• [Presentation] 光照射下におけるn型GaN中プラズマ照射誘起欠陥の挙動の温度依存性 (2015)
  • Author(s): 折茂力都，横山大樹，中村成志，奥村次徳
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2015-03-11
• [Presentation] プラズマ照射により不活性化されたn型GaN中ドナーの再活性化メカニズムの検討 (2014)
  • Author(s): 横山大樹，中村成志，奥村次徳
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス
  • Year and Date: 2014-09-18