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Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability

Research Project

Project/Area Number 26390057
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionKanazawa Institute of Technology

Principal Investigator

Ueda Osamu  金沢工業大学, 工学研究科, 教授 (50418076)

Co-Investigator(Kenkyū-buntansha) 矢口 裕之  埼玉大学, 理工学研究科, 教授 (50239737)
Co-Investigator(Renkei-kenkyūsha) IKENAGA NORIAKI  金沢工業大学, 工学部, 准教授 (30512371)
YAGI SHUHEI  埼玉大学, 理工学研究科, 准教授 (30421415)
Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords希釈窒化物半導体 / 欠陥 / 光照射 / 劣化 / 点欠陥 / 転位 / 電子顕微鏡 / フォトルミネッセンス
Outline of Final Research Achievements

In order to clarify degradation mechanism of optical devices fabricated from dilute nitride semiconductors such as GaInNAs, grown-in defects were characterized by transmission electron microscopy, and generation and multiplication of defects in the crystals under laser irradiation were investigated.
It has been shown that defects such as point defect clusters and dislocation loops are not generated in as-grown GaInNAs crystals. Furthermore, in the case of laser irradiation of GaInNAs/GaAs SQW structure, we have found that the emission efficiency increased for lower laser power density and that the emission efficiency drastically increased then decreased for higher power density. In both cases, no structural defects were newly generated by the laser irradiation. Further increase in the laser power density is required for detailed investigation of the degradation mechanism.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Research-status Report
  • 2014 Research-status Report
  • Research Products

    (32 results)

All 2017 2016 2015 2014

All Journal Article (14 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 14 results,  Acknowledgement Compliant: 5 results) Presentation (17 results) (of which Int'l Joint Research: 6 results,  Invited: 3 results) Book (1 results)

  • [Journal Article] Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates2017

    • Author(s)
      K. Ishii, S. Yagi, and H. Yaguchi
    • Journal Title

      Physica Status Solidi B

      Volume: 254 Issue: 2 Pages: 1600542-1600542

    • DOI

      10.1002/pssb.201600542

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Structural evaluation of defects in beta-Ga2O3 single crystals grown by edge-defined film-fed growth process2016

    • Author(s)
      O. Ueda N. Ikenaga, K. Koshi, K. Iizuka, A. Kuramata, K. Hanada, T. Moribayashi, S. Yamakoshi, and M. Kasu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202BD-1202BD

    • DOI

      10.7567/jjap.55.1202bd

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Effect of thermal annealing on the crystallization of low-temperature-grown In0.42Ga0.58As on InP substrate2016

    • Author(s)
      Y. Tominaga, Y. Kadoya, H. Morioka, and O. Ueda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 11 Pages: 110313-110313

    • DOI

      10.7567/jjap.55.110313

    • NAID

      210000147219

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes2016

    • Author(s)
      M. Kasu, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oshima, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202BB-1202BB

    • DOI

      10.7567/jjap.55.1202bb

    • NAID

      210000147271

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation2016

    • Author(s)
      N. Kamata, M. Suetsugu, D. Haque, S. Yagi, H. Yaguchi, F. Karlsson, P.O. Holtz
    • Journal Title

      Physica Stat. Solidi. B

      Volume: 254 Issue: 2 Pages: 1600566-1600566

    • DOI

      10.1002/pssb.201600566

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3 single crystals2016

    • Author(s)
      K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu.
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 3 Pages: 030303-030303

    • DOI

      10.7567/jjap.55.030303

    • NAID

      210000146118

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices2015

    • Author(s)
      T. Suzuki, K. Okada, S. Yagi, S. Naitoh, Y. Shoji, Y. Hijikata, Y. Okada, and H. Yaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 54 Issue: 8S1 Pages: 08KA07-08KA07

    • DOI

      10.7567/jjap.54.08ka07

    • NAID

      210000145536

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Control of intermediate-band configulation in GaAs:N δ-doped superlattice2015

    • Author(s)
      K. Osada, T. Suzuki, S. Yagi, S. Naitoh, Y. Shoji, Y. Y. Hijikata, Y. Okada, and H. Yaguchi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 8S1 Pages: 08KA04-08KA04

    • DOI

      10.7567/jjap.54.08ka04

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy2015

    • Author(s)
      R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 5 Pages: 051201-051201

    • DOI

      10.7567/jjap.54.051201

    • NAID

      210000145121

    • Related Report
      2015 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Microstructures of InN films on 4H-SiC (0001) substrate grown by RF-MBE2015

    • Author(s)
      P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, and P. Limsuwan
    • Journal Title

      J. Semicond.

      Volume: 36 Issue: 8 Pages: 083002-083002

    • DOI

      10.1088/1674-4926/36/8/083002

    • Related Report
      2015 Research-status Report
    • Peer Reviewed
  • [Journal Article] Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon2015

    • Author(s)
      A. Y. Liu, R. W. Herrick, O. Ueda, P. M. Petroff, A. C. Gossard, and J. E. Bowers
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 21 Issue: 6 Pages: 1-8

    • DOI

      10.1109/jstqe.2015.2418226

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Journal Article] Enhanced optical absorption due to E+-related band transition in GaAs:N2014

    • Author(s)
      S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H.
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 10 Pages: 102301-102301

    • DOI

      10.7567/apex.7.102301

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014

    • Author(s)
      W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
    • Journal Title

      Physica Status Solidi A

      Volume: 211 Issue: 4 Pages: 752-755

    • DOI

      10.1002/pssa.201300462

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Journal Article] First-principles study on the conduction band electron states of GaAsN alloys2014

    • Author(s)
      K. Sakamoto and H. Yaguchi
    • Journal Title

      Physica Status Solidi C

      Volume: 11 Issue: 3-4 Pages: 911-913

    • DOI

      10.1002/pssc.201300531

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Presentation] 中間バンド型GaPN混晶でのキャリア再結合過程の光学的評価2017

    • Author(s)
      根岸知華、ドゥラル ハク、鎌田憲彦、矢口裕之
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] Gradual degradation in III-V and GaN-related optical devices2017

    • Author(s)
      O. Ueda
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Place of Presentation
      東北大学金属材料研究所(宮城県・仙台市)
    • Year and Date
      2017-01-17
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] EFG成長したβ-Ga2O3結晶中の欠陥のTEMを中心とした評価2017

    • Author(s)
      上田 修、池永訓昭
    • Organizer
      日本学術振興会第161委員会第98回研究会
    • Place of Presentation
      長浜ロイヤルホテル(滋賀県・長浜市)
    • Year and Date
      2017-01-13
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] レーザ照射によるGaInNAs半導体の発光効率への影響2016

    • Author(s)
      米倉成一、高宮健吾、八木修平、上田 修、矢口裕之
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] InGaN/GaN単一量子井戸構造の光照射による劣化2016

    • Author(s)
      上田 修、山口敦史、谷本瞬平、西堀翔宣、熊倉一英、山本秀樹
    • Organizer
      第35回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2016-07-07
    • Related Report
      2016 Annual Research Report
  • [Presentation] Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence2016

    • Author(s)
      M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, and P. -O. Holtz
    • Organizer
      43rd International Symposium on Compound Semiconductors
    • Place of Presentation
      富山国際会議場(富山県・富山市)
    • Year and Date
      2016-06-27
    • Related Report
      2016 Annual Research Report
  • [Presentation] Growth temperature dependence of crystalline state of low-temperature-grown InGaAs on InP substrates2015

    • Author(s)
      Y. Tominaga, Y. Kadoya, H. Morioka, and O. Ueda
    • Organizer
      EMN 3CG 2015
    • Place of Presentation
      Hong Kong(China)
    • Year and Date
      2015-12-16
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy2015

    • Author(s)
      S. Yagi, Y. Sato, N. Ueyama, T. Suzuki, K. Osada, Y. Okada, and H. Yaguchi
    • Organizer
      5th Int. Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Hsinchu(Taiwan)
    • Year and Date
      2015-09-08
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Epitaxial relationship of GaN grown on GaAs (110) by RF-molecular beam2015

    • Author(s)
      T. Ikarashi, M. Orihara, S. Yagi, S. Kuboya, R. Katayama, and H. Yaguchi
    • Organizer
      11th Int. Conf. Nitride Semiconductors
    • Place of Presentation
      Beijing(China)
    • Year and Date
      2015-09-01
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Lateral alignment of InN nano-scale dots grown on 4H-SiC (0001) vicinal substrates2015

    • Author(s)
      S. Mori, S. Yagi, M. Orihara, K. Takamiya, and H. Yaguchi
    • Organizer
      11th Int. Conf. Nitride Semiconductors
    • Place of Presentation
      Beijing(China)
    • Year and Date
      2015-09-01
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] Nonradiative recombination pathway via the intermediate band in GaP1-xNx studied by below-gap excitation2015

    • Author(s)
      M. Suetsugu, M. Eriksson, K. F. Karlsson, P. O. Holtz, N. Kamata, S. Yagi, and H. Yaguchi
    • Organizer
      28th Int. Conf. Defects in Semiconductors
    • Place of Presentation
      Espoo(Finland)
    • Year and Date
      2015-07-31
    • Related Report
      2015 Research-status Report
    • Int'l Joint Research
  • [Presentation] GaAs:N δドープ超格子を有する太陽電池の二段階吸収2015

    • Author(s)
      鈴木智也, 八木修平, 土方泰斗, 岡田至崇, 矢口裕之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県・平塚市)
    • Year and Date
      2015-03-13
    • Related Report
      2014 Research-status Report
  • [Presentation] Control of Intermediate Band Configuration in GaAs:N δ-doped Superlattice2014

    • Author(s)
      K. Osada, T, Suzuki, S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi
    • Organizer
      6th World Conference on Photovoltaic Energy Conversion
    • Place of Presentation
      国立京都国際会館(京都府・京都市)
    • Year and Date
      2014-11-26
    • Related Report
      2014 Research-status Report
  • [Presentation] Molecular Beam Epitaxy Growth of Intermediate Band Materials Based on GaAs:N δ-Doped Superlattices2014

    • Author(s)
      T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi
    • Organizer
      6th World Conference on Photovoltaic Energy Conversion
    • Place of Presentation
      国立京都国際会館(京都府・京都市)
    • Year and Date
      2014-11-25
    • Related Report
      2014 Research-status Report
  • [Presentation] 中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長2014

    • Author(s)
      鈴木智也, 長田一輝, 八木修平, 内藤俊弥, 土方泰斗, 岡田至崇, 矢口裕之
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道・札幌市)
    • Year and Date
      2014-09-19
    • Related Report
      2014 Research-status Report
  • [Presentation] Degradation of InGaN/GaN SQW Structure under Optical Irradiation2014

    • Author(s)
      O. Ueda, A. A. Yamaguchi, S. Tanimoto, S. Nishibori, K. Kumakura, and H. Yamamoto
    • Organizer
      International Workshop on Nitride Semiconductors IWN 2014
    • Place of Presentation
      Wroclaw (Poland)
    • Year and Date
      2014-08-27
    • Related Report
      2014 Research-status Report
  • [Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014

    • Author(s)
      Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
    • Organizer
      The 41st International Symposium on Compound Semiconductors
    • Place of Presentation
      Montpellier (France)
    • Year and Date
      2014-05-12
    • Related Report
      2014 Research-status Report
  • [Book] 新版 信頼性ハンドブック2014

    • Author(s)
      眞田 克、弓削哲史、横川慎二、松尾陽太郎、山本繁晴、青木雄一、田中浩和、伊藤貞則、岩谷康次郎、二川 清、上田 修、他
    • Total Pages
      944
    • Publisher
      株式会社日科技連出版社
    • Related Report
      2014 Research-status Report

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Published: 2014-04-04   Modified: 2018-03-22  

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