| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO2) layers on Si(100) substrates, which is enabled by surface potential modification during the growth process. Adopting an electron beam irradiation method, we attained the successful results of the hybrid orientation structure (HOS) of CeO2(100) and (110) areas on Si(100) substrates. There exists a transition region containing both orientation components between the two orientation areas and its width decreases proportionally as the logarithm of underlying Si substrate resistivity. With the aim of perfect isolation of the two orientation areas, we have succeeded in HOS fabrication using silicon on insulator substrates with lithographically formed trenches.
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