Perfect separation between different orientation regions in hybrid orientation structure grown by orientation selective epitaxy
| Project/Area Number |
26390067
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Iwaki Meisei University |
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Principal Investigator |
Inoue Tomoyasu いわき明星大学, 科学技術学部, 教授 (60193596)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 薄膜 / 方位選択エピタキシャル成長 / 結晶成長 / 超薄膜 / 表面・界面物性 / 方位選択エピタキシ / 電子ビーム照射 / 複合面方位構造 / 極薄膜 / 表面界面物性 / 方位選択エピタキシー / 複合面方位 / 絶縁層上シリコン膜(SOI) / トレンチ / 表面海面物性 |
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| Outline of Final Research Achievements |
We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO2) layers on Si(100) substrates, which is enabled by surface potential modification during the growth process. Adopting an electron beam irradiation method, we attained the successful results of the hybrid orientation structure (HOS) of CeO2(100) and (110) areas on Si(100) substrates. There exists a transition region containing both orientation components between the two orientation areas and its width decreases proportionally as the logarithm of underlying Si substrate resistivity. With the aim of perfect isolation of the two orientation areas, we have succeeded in HOS fabrication using silicon on insulator substrates with lithographically formed trenches.
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Report
(4 results)
Research Products
(13 results)
