| Project/Area Number |
26390072
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Aerospace EXploration Agency |
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Principal Investigator |
Hirose Kazuyuki 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 教授 (00280553)
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| Co-Investigator(Renkei-kenkyūsha) |
NOHIRA Hiroshi 東京都市大学, 工学部・電気電子工学科, 教授 (30241110)
KOBAYASHI Daisuke 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (90415894)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | SiO2 / interface / amorphous / XPS / XANES / defect / 界面 / シリコン酸化膜 / MOSFET / アモルファス / 欠陥準位 / 光電子分光 |
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| Outline of Final Research Achievements |
We studied 1nm-SiO2 films thermally grown on Si(100), Si(110), and (111) substrates by using x-ray photoelectron spectroscopy and x-ray absorption near edge structure spectroscopy. We found the amorphous structure in terms of density, Si-O-Si bond angle, and arrangement differs among those samples. Those difference is considered to be responsible for observed difference in defect density for 1-nm thick SiO2 films. Therefore reliability of gate Si oxide will be dependent on the orientation of Si surfaces which is oxidized during the 3-dimensional MOSFET process.
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