| Project/Area Number |
26390075
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Optical engineering, Photon science
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology (2016)
The University of Tokyo (2014-2015) |
|---|
Principal Investigator |
YOSHITA MASAHIRO 国立研究開発法人産業技術総合研究所, 太陽光発電研究センター, 主任研究員 (30292759)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
AKIYAMA Hidefumi 東京大学, 物性研究所, 教授 (40251491)
|
|---|
| Research Collaborator |
CHEN Shaoqiang 華東師範大学, 教授
ITOH Takashi 東京大学, 物性研究所, 博士研究員
NAKAMURA Takahiro 東京大学, 物性研究所, 学生
NAKAMAE Hidekazu 東京大学, 物性研究所, 学生
|
|---|
| Project Period (FY) |
2014-04-01 – 2017-03-31
|
| Project Status |
Completed (Fiscal Year 2016)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | 半導体レーザー / 利得スイッチング動作 / 超短パルス / 光エレクトロニクス / 光学非線形効果 / 光源技術 / 長短パルス / 半導体レーザ / 超短光パルス |
|---|
| Outline of Final Research Achievements |
Lasing performance of gain-switched semiconductor lasers under intense excitation was systematically studied. At low photo-excitation, optical pulses were generated in accordance with a conventional rate-equation analysis in a gain-switched GaAs bulk laser. However, as the photo-excitation intensity increased, the pulse width of the generated optical pulses became shorter and simultaneously spectrally broadened toward shorter-wavelength region, which was not explained by the conventional rate-equation analysis. It was also confirmed that the pulse width at the shorter-wavelength region of the optical pulses was shorter than 1 ps. The generation mechanisms of the observed unique optical pulses under intense excitation were discussed with a phenomenological carrier-dynamics model taking into account transient energy distributions and intra-band relaxations of the photo-excited carriers in the active gain region.
|
