Development of plasma processing methods for the metallic oxide thin films having an electricity storage function
| Project/Area Number |
26390098
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Plasma electronics
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
高田 啓二 関西大学, システム理工学部, 教授 (50416939)
梶山 博司 徳島文理大学, 理工学部, 教授 (80422434)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | フォトクロミズム / プラズマCVD / PLD / 金属酸化薄膜 / X線吸収微細構造 / 蓄電機能 / プラズマプロセス / CVD / 蓄電 / PLD法 / 金属酸化膜 / エレクトロクロミズム |
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| Outline of Final Research Achievements |
Metallic oxide thin-films made of zinc oxide and silicon oxide, for example, exhibit photochromism (PC) and electrochromism. This study developed the method to fabricate such thin films using plasma processing. Two methods were used. One was the pulsed laser deposition (PLD) method and another was the plasma CVD method. By the PLD method, PC thin films were successfully fabricated on the whole surface of the 30 mm square substrate. For the CVD method, we found that the PC-transformation can be exhibited only by the zinc oxide (ZnO) thin film. The crystal structure of the ZnO PC thin films were examined by the x-ray absorption at the Zn-K edge. It is confirmed that the ionic valence around Zn atoms is changed as a result of the PC-transformation.
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Report
(4 results)
Research Products
(4 results)
